M54HC86D ,RAD HARD QUAD EXCLUSIVE OR GATEM54HC86RAD HARD QUAD EXCLUSIVE OR GATE
M54HC86D
RAD HARD QUAD EXCLUSIVE OR GATE
1/9June 2004 HIGH SPEED:
tPD= 12ns (TYP.)at VCC =6V LOW POWER DISSIPATION:CC =1μA(MAX.)atTA =25°C HIGH NOISE IMMUNITY:NIH =VNIL= 28%VCC (MIN.) SYMMETRICAL OUTPUT IMPEDANCE:
|IOH|= IOL =4mA (MIN) BALANCED PROPAGATION DELAYS:
tPLH≅ tPHL WIDE OPERATING VOLTAGE RANGE:CC (OPR)= 2Vto 6V PIN AND FUNCTION COMPATIBLE WITH SERIES86 SPACE GRADE-1: ESA SCC QUALIFIED 50 krad QUALIFIED, 100 krad AVAILABLE ON
REQUEST NO SEL UNDER HIGH LET HEAVY IONS
IRRADIATION DEVICE FULLY COMPLIANT WITH
SCC-9201-119
DESCRIPTIONThe M54HC86is anhighspeed CMOS QUAD
EXCLUSIVE OR GATE fabricated with silicon
gateC2 MOS technology.
Input and output buffer are installed, which
enables high noise immunity and stable output.
All inputs are equipped with protection circuits
against static discharge and transient excess
voltage.
M54HC86RAD HARD QUAD EXCLUSIVE OR GATE
PIN CONNECTION
ORDER CODESRev.1
M54HC862/9
Figure1: IEC Logic Symbols
Figure2: Input And Output Equivalent Circuit Table1: Pin Description
Table2: Truth Table
Table3: Absolute Maximum RatingsAbsoluteMaximum Ratingsare those values beyond which damagetothe device mayoccur.Functional operation under these conditionsis
not implied
M54HC863/9
Table4: Recommended Operating Conditions
Table5: DC Specifications
Table6: AC Electrical Characteristics(CL=50 pF, Inputtr=tf= 6ns)
M54HC864/9
Table7: Capacitive Characteristics CPD isdefinedasthe valueofthe IC’s internal equivalent capacitance whichis calculatedfrom theoperating current consumption without
load.(Referto Test Circuit). Averageoperatingcurrentcan beobtained bythefollowingequation. ICC(opr) =CPD xVCC xfIN +ICC/4 (per gate)
Figure3: Test Circuit= 50pFor equivalent (includesjig and probe capacitance) =ZOUTof pulse generator (typically 50Ω)
M54HC865/9
Figure4: Waveform- Propagation Delay Time (f=1MHz; 50% duty cycle)
