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28F256-M28F256-10C1TR-M28F256-10C3TR-M28F256-12C1TR-M28F256-12C3TR Fast Delivery,Good Price
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M28F256-10C1TR |M28F25610C1TRSTN/a6309avai512 Kbit (64Kb x8 Bulk Erase)Flasxh Memory
M28F256-10C3TR |M28F25610C3TRSTN/a2600avai512 Kbit (64Kb x8 Bulk Erase)Flasxh Memory
M28F256-12C1TR |M28F25612C1TRSTN/a5120avai512 Kbit (64Kb x8 Bulk Erase)Flasxh Memory
M28F256-12C3TR |M28F25612C3TRSTN/a2300avai512 Kbit (64Kb x8 Bulk Erase)Flasxh Memory
M28F256-15C1TR |M28F25615C1TRSTN/a3000avai512 Kbit (64Kb x8 Bulk Erase)Flasxh Memory
M28F256-15C3TR |M28F25615C3TRSTN/a3000avai512 Kbit (64Kb x8 Bulk Erase)Flasxh Memory
M28F256-20C1TR |M28F25620C1TRSTN/a6309avai512 Kbit (64Kb x8 Bulk Erase)Flasxh Memory
M28F256-20C3TR |M28F25620C3TRSTN/a6309avai512 Kbit (64Kb x8 Bulk Erase)Flasxh Memory
M28F256-90C1TR |M28F25690C1TRSTN/a4600avai512 Kbit (64Kb x8 Bulk Erase)Flasxh Memory
M28F256-90C3TR |M28F25690C3TRSTN/a4600avai512 Kbit (64Kb x8 Bulk Erase)Flasxh Memory
28F256AMD/N/a3000avai512 Kbit (64Kb x8 Bulk Erase)Flasxh Memory


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M28F256-12C1TR ,512 Kbit (64Kb x8 Bulk Erase)Flasxh MemoryLogic Diagram DESCRIPTION The M28F256 FLASH Memory Is a non-volatile memory which may be era ..
M28F256-12C3TR ,512 Kbit (64Kb x8 Bulk Erase)Flasxh MemoryLogic Diagram DESCRIPTION The M28F256 FLASH Memory Is a non-volatile memory which may be era ..
M28F256-15C1TR ,512 Kbit (64Kb x8 Bulk Erase)Flasxh MemoryAbsolute Maximum Ratings Parameter 'r'r"1Tv.rrn..F.rr..L Am bient Operating Temperature m ..
M28F256-15C3TR ,512 Kbit (64Kb x8 Bulk Erase)Flasxh Memoryapplications where the memory has to be repro- grammed in the equipment. The access time of 100ns ..
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M4T28-BR12SH ,TIMEKEEPER SNAPHAT Battery & CrystalAbsolute Maximum Ratings . 7DC and AC PARAMETERS . . 8Table 3. DC and AC Measurement Co ..
M4T28-BR12SH1 ,TIMEKEEPER SNAPHAT (BATTERY & CRYSTAL)M4T28-BR12SHM4T32-BR12SH® ®TIMEKEEPER SNAPHAT (Battery & Crystal)
M4T32-BR12SH1 ,TIMEKEEPER SNAPHAT (BATTERY & CRYSTAL)Logic Diagram Table 1. Signal NamesX1 Crystal InputX2 Crystal OutputX1 X2V Negative VoltageBAT–V Po ..
M4T32-BR12SH6 ,TIMEKEEPER SNAPHAT (BATTERY & CRYSTAL)TABLE OF CONTENTSSUMMARY DESCRIPTION... ...... ....... ...... ....... ...... ....... ...... ...... ..


28F256-M28F256-10C1TR-M28F256-10C3TR-M28F256-12C1TR-M28F256-12C3TR-M28F256-15C1TR-M28F256-15C3TR-M28F256-20C1TR-M28F256-20C3TR-M28F256-90C1TR-M28F256-90C3TR
512 Kbit (64Kb x8 Bulk Erase)Flasxh Memory
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M28F256
256K (32K x 8, Chip Erase) FLASH MEMORY
u FAST ACCESS TIME: 90ns
I: LOW POWER CONSUMPTION
- Standby Current: 100PA Max
II 10,000 ERASE/PROGRAM CYCLES
II 12V PROGRAMMING VOLTAGE
II TYPICAL BYTE PROGRAMMING TIME10th
(PRESTO F ALGORITHM)
u ELECTRICAL CHIP ERASE IN1s RANGE
n INTEGRATED ERASE/PROGRAM STOP
n EXTENDEDTEMPERATURE RANGES
DESCRIPTION
The M28F256 FLASH Memory Is a non-volatile
memory which may be erased electrically at the
chip level and programmed byte-by-byte. It is or-
ganised as 32K bytes of 8 bits. It uses a command
register architecture to select the operating modes
and thus provides a simple microprocessor inter-
face The M28F256 FLASH Memory is suitable for
applications where the memory has to be repro-
grammed in the equipment. The access time of
100ns makes the device suitable for use in high
speed microprocessor systems.
Table 1. Signal Names
A0 - A14 Address Inputs
DQO - DQ7 Data Inputs / Outputs
E Chip Enable
5 Output Enable
W Write Enable
Vpp Program Supply
Vcc Supply Voltage
Vss Ground
March 1996
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PDIP32(B) PLCC32(C)
Figure 1. Logic Diagram
Vcc VPP
A04H4 i)
M28F256
AIOOSBSB
M28F256
Figure 2A. DIP Pin Connections
Figure 2B. LCC Pin Connections
VPPE1 ' 32]Vcc
NC[2 31 lih7
NCt3 30]NC
A12t4 291A14
A7[5 28 1A13
A6t6 27ilA8
A5t7 26]A9
A4 8 25 All
A359 M28F256 24 "
A2[10 23 1A10
A1 5 11 221E
AO[12 211007
000[13 201006
001[14 191005
002[15 151004
VSS[16 17 ]DQ3
Al00689
A7 1A14
A6 1A13
A5 1A8
A4 ]A9
A3 M28F256 25 1A11
A1 1A1o
000 1007
w- N U) tD V In (0
o 0 mo 0 o o
D D > O D a a
AIOOBSO
Warning: NC = Not Connected
Table 2. Absolute Maximum Ratings
Warning: NC = Not Connected
Symbol Parameter Value Unit
TA Ambient Operating Temperature -40 to 125 'C
TSTG Storage Temperature Hi5 to 150 °C
VIO Input or Output Voltages -0.6 to 7
Vcc Supply Voltage -0.6 to 7
VA9 A9 Voltage --0.6 to 13.5
VPP ''rTrrtr,'r1ai2,'i'r',t, Voltage, during Erase -0.6 to 14 V
Note: Exceptfor the rating "Operating Temperatsra Range", stresses above those Ilsted m the Table "Absolute Maximum Ratings" may
cause permanent damage to the devuce These are stress ratmgs only and operatlon of the deuce at these or any other conditions above
those indlcated In the Operating sectlons of thus specmcatlon IS not Implied Exposure to Absolute Maximum Rating conditions for extended
periods may affect device reliability Refer also to the SGS-THOMSON SURE Program and other relevant quality documents
DEVICE OPERATION
The M28F256 FLASH Memory employs atechnol-
ogy similar to a 256K EPROM but adds to the
device functionality by providing electrical erasure
and programming. These functions are managed
by a command register. The functions that are
addressed via the command register depend on
the voltage applied to the VPP, program voltage,
2/ 20 -
£71 tli-Isa-Jar-fl-lille,,.,,'
input. When Vpp is less than or equal to 6.5V, the
command register is disabled and M28F256 func-
tions as a read only memory providing operating
modes similar to an EPROM (Read, Output Dis-
able, Electronic Signature Read and Standby).
When VPP is raised to 12V the command register
is enabled and this provides, in addition, Erase and
Program operations.
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