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M22101B1STN/a2234avaiWITH CONTROL MEMORY 4 X 4 X 2 CROSSPOINT SWITCHES
M22102B1STN/a1000avaiWITH CONTROL MEMORY 4 X 4 X 2 CROSSPOINT SWITCHES


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M22101B1-M22102B1
WITH CONTROL MEMORY 4 X 4 X 2 CROSSPOINT SWITCHES
M22101
M22102

WITH CONTROL MEMORY X4 X2 CROSSPOINT SWITCHES
(Plastic Package)
ORDER CODES:

M22XXX B1 M22XXX F1
(CeramicPackage)
PIN CONNECTIONS
LOWON RESISTANCE–75Ω TYP AT
VDD =12V. ”BUILT-IN” LATCHED INPUTS. LARGE ANALOG SIGNAL CAPACITY± VDD/2.10 MHz SWITCH BANDWITH. MATCHED SWITCH CHARACTERISTICS.Δ RON=8Ω TYP, AT VDD =12V. HIGH LINEARITY– 0.25% DISTORTION TYP,f=1 kHz, VIN=5V, VDD -VSS=10V AND=1Ω. STANDARD CMOS NOISE IMMUNITY
TheM22101 and M22102 crosspoint switches con-
sistof4x4x2 arraysof crosspoints (transmission
gates), 4-lineto 16-line decoders, and16 latch cir-
cuits.Any oneof the sixteen crosspoint pairs canbe
selectedby applying the appropriate four-line ad-
dressandany number ofcrosspoint pairscanbe ON
simultaneously. Corresponding crosspointsin each
array are turnedon and OFF simultaneously, also. the M22101, the selected crosspoint pair canbe
turnedon oroffby applyinga logical ONEor ZERO,
respectively,to the data input, and applyinga ONE the strobe input. When the deviceis ”power-up”,
the stateof the16 switchesis indeterminate.
Thereforeall switches mustbe turnedoffby putting
the strobe hight, data-in-low, and the addressingall
switchesin succession.
The selected pairof crosspointsin the M22102is
turnedonby applyinga logical ONEto theKa (set)
input whilea logical ZEROison theKb (reset) input,
and turnedoffby applyinga logical ONEto theKb
input whilea logical ZEROison theKa input.In this
respectthe control latches ofthe M22102are similar SET/RESET flip-flops. They differ, however,in
that the simultaneous applicationof ONEsto theKa
andKb inputs turnsoff (resets)all crosspoints.All
crosspointsin both devices must be turnedoffas
VDDis applied.DESCRIPTION
ABSOLUTE MAXIMUM RATING
Symbol Parameter Value Unit

VDD Supply Voltage: Ceramic Type
Plastic Type
-0.5to +20
-0.5to +18 Input Voltage -0.5to VDD+ 0.5 V DC Input Current (any one input) ±10 mA
Ptot Total Power Dissipation (per package)
Dissipation per Output Transistor
for Top= Full Package Temperature Range
Top Operating Temperature: Ceramic Type
Plastic Type
-55to +125
-40to +85CC
Tstg Storage Temperature -65to +150 oC
Stressesabove thoselistedunder ”Absolute Maximum Ratings”maycausepermanent damagetothedevice.Thisisa stressratingonlyand functional
operation ofthe deviceat theseorany othercond itions above those indicatedin theoperational sectionsof thisspecification isnotimplied.Exposure
toabsolute maximumratingconditions forexternal periods mayaffectdevice reliability.
RECOMMENDED OPERATING CONDITIONS
Symbol Parameter Value Unit

VDD Supply Voltage: Ceramic Type
Plastic Type
3to18
3to15 Input Voltage 0to VDD V
Top Operating Temperature: Ceramic Type
Plastic Type
-55to +125
-40to +85CC
CONTROL TRUTH TABLE FOR M22101
Function Address Strobe Data SelectAB CD

Switch-on 1 1 1 1 1 1 (X4 Y4)& (X4’ Y4’)
Switch-off 1 1 1 1 1 0 (X4 Y4)& (X4’ Y4’) Change X X X X 0 X XXXX
Note:1=High,0= Low, X=Don’tCare
CONTROL TRUTH TABLE FOR M22102
Function Address Strobe Data SelectAB CD

Switch-on 1 1 1 1 1 0 (X4 Y4)& (X4’ Y4’)
Switch-off 1 1 1 1 0 1 (X4 Y4)& (X4’ Y4’)
All Switch-off X X X X 1 1 All Change X X X X 0 0 XXXX
Note:1=High,0= Low, X=Don’tCare
M22101/M22102
FUNCTIONAL AND BLOCK DIAGRAM
DECODER TRUTH TABLE
Address Select Address SelectABCD AB CD

0000 X1Y1 X1’ Y1’ 0001 X1Y3 X1’ Y3’
1000 X2Y1 X2’ Y1’ 1001 X2Y3 X2’ Y3’
0100 X3Y1 X3’ Y1’ 0101 X3Y3 X3’ Y3’
1100 X4Y1 X4’ Y1’ 1101 X4Y3 X4’ Y3’
0010 X1Y2 X1’ Y2’ 0011 X1Y4 X1’ Y4’
1010 X2Y2 X2’ Y2’ 1011 X2Y4 X2’ Y4’
0110 X3Y2 X3’ Y2’ 0111 X3Y4 X3’ Y4’
1110 X4Y2 X4’ Y2’ 1111 X4Y4 X4’ Y4’
M22101/M22102
STATIC ELECTRICAL CHARACTERISTICS (over recommended operating conditions)
Symbol Parameter
Test Conditios Value
UnitVI

(V)
VDD

(V)
TLOW *25o CTHIGH*
Min. Max. Min. Typ. Max. Min. Max.
CROSSPOINT
Quiescent
Supply
Current F1 0.04 5 150 0.04 10 300 0.04 20 600 0.08 100 3000 0.04 20 150 0.04 40 300 0.04 80 600
RON On
Resistance F1 Any Switch 450 225 1250 1625 135 85 180 230 100 75 135 175 70 65 95 125 VIS=0to VDD 1000 225 1250 1440 145 85 180 205 110 75 135 155 75 65 95 110
ΔON Resistance ΔRON
(Between any two
channels)
53510 20 18 15
OFF
Channel
Leakage
Current All Switch
OFF 0/18 18 ±0.1 ±10-3 ±0.1•±1 0/15 15 ±0.3 ±10-3 ±0.3 ±1
CONTROL

VIL Input Low
Voltage
OFF Switch< 0.2μA 1.5 1.5 1.510 3 3 3 4 4 4
VIH Input High
Voltage Switch
see RON
Characteristics 3.5 3.5 3.510 7 7 7 11 11 11 Input
Current Any Control
Input
0/18 18 ±0.1 ±10-5 ±0.1 ±1 μAB1 0/15 15 ±0.3 ±10-5 ±0.3 ±1 Input Capacitance Any Input 5 7.5 pF Determinedby minimum feasible leakagemeasurement forautomatic testing
*TLOW=-55o CforHCC device:-40oC forHCFdevice.
*THIGH =+125o Cfor HCC device:+85oCfor HCFdevice.
The Noise Marginfor both”1” and”0” levelis:1V min.withVDD=5V,2V min.withVDD =10V,2.5 Vmin. withVDD=15V
M22101/M22102
DYNAMIC ELECTRICAL CHARACTERISTICS (Tamb =25oC, CL =50 pF, RL= 200 KΩ,
typical temperature coefficent forall VDD valuesis 03 %/oC,all input rise and fall times= 20 ns)
Symbol Parameter Test Conditions Value UnitVDD
(V) Min. Typ. Max.
tPHL
tPLH
Propagation Delay Time Addressor Strobe
Inputsto Output RL =10 KΩ =50pF 12
200 ns
tPHL
tPLH
Propagation Delay Time Across Crosspoint 20 ns
Minimum Strobe Pulse Width 80 ns
M22101/M22102
Plastic DIP24 (0.25) MECHANICAL DATA
DIM. mm inch
MIN. TYP. MAX. MIN. TYP. MAX.
0.63 0.025 0.45 0.018 0.23 0.31 0.009 0.012 1.27 0.050 32.2 1.268 15.2 16.68 0.598 0.657 2.54 0.100 27.94 1.100 14.1 0.555 4.445 0.175 3.3 0.130
M22101/M22102
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