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Partno Mfg Dc Qty AvailableDescript
LMC662AIMNSN/a20000avaiCMOS Dual Operational Amplifier
LMC662AIM. |LMC662AIMNSN/a10000avaiCMOS Dual Operational Amplifier
LMC662AIMXNSC ?N/a132avaiCMOS Dual Operational Amplifier
LMC662AINNSCN/a125avaiCMOS Dual Operational Amplifier
LMC662CMNS ?N/a50avaiCMOS Dual Operational Amplifier
LMC662CM. |LMC662CMNSN/a10000avaiCMOS Dual Operational Amplifier
LMC662CMXNSN/a4755avaiCMOS Dual Operational Amplifier
LMC662CNNSCN/a50avaiCMOS Dual Operational Amplifier


LMC662AIM ,CMOS Dual Operational AmplifierLMC662 CMOS Dual Operational AmplifierApril 2003LMC662CMOS Dual Operational Amplifier
LMC662AIM. ,CMOS Dual Operational AmplifierLMC662 CMOS Dual Operational AmplifierApril 2003LMC662CMOS Dual Operational Amplifier
LMC662AIM/NOPB ,CMOS Dual Operational Amplifier 8-SOIC -40 to 85Electrical Characteristics+−Unless otherwise specified, all limits ensured for T = 25°C. Boldface l ..
LMC662AIM/NOPB ,CMOS Dual Operational Amplifier 8-SOIC -40 to 85Electrical Characteristics. The ensured specifications apply only for the test conditions listed.(2 ..
LMC662AIMX ,CMOS Dual Operational AmplifierFeaturesn Rail-to-rail output swingThe LMC662 CMOS Dual operational amplifier is ideal foroperation ..
LMC662AIN ,CMOS Dual Operational AmplifierElectrical Characteristics+Unless otherwise specified, all limits guaranteed for T = 25˚C. Boldface ..
LQG15HS5N6S02D , Chip Inductor (Chip Coil) for High Frequency Multilayer Type
LQG15HS5N6S02D , Chip Inductor (Chip Coil) for High Frequency Multilayer Type
LQG15HS6N2S02D , Chip Inductor (Chip Coil) for High Frequency Multilayer Type
LQG15HS6N8J02D , Chip Inductor (Chip Coil) for High Frequency Multilayer Type
LQG15HS6N8J02D , Chip Inductor (Chip Coil) for High Frequency Multilayer Type
LQG15HS82NJ02D , Chip Inductor (Chip Coil) for High Frequency Multilayer Type


LMC662AIM-LMC662AIM.-LMC662AIMX-LMC662AIN-LMC662CM-LMC662CM.-LMC662CMX-LMC662CN
CMOS Dual Operational Amplifier
LMC662
CMOS Dual Operational Amplifier
General Description

The LMC662 CMOS Dual operational amplifieris idealfor
operation froma single supply.It operates from +5Vto +15V
and features rail-to-rail output swingin additiontoan input
common-mode range that includes ground. Performance
limitations that have plagued CMOS amplifiersin the past
are nota problem with this design. Input VOS, drift, and
broadband noiseas wellas voltage gain into realistic loads kΩ and 600Ω) areall equaltoor better than widely
accepted bipolar equivalents.
This chipis built with National’s advanced Double-Poly
Silicon-Gate CMOS process.
See the LMC660 datasheetfora Quad CMOS operational
amplifier with these same features.
Features
Rail-to-rail output swing Specifiedfor2kΩ and 600Ω loads High voltage gain: 126dB Low input offset voltage:3 mV Low offset voltage drift: 1.3 µV/˚C Ultra low input bias current:2fA Input common-mode range includesV− Operating range from +5Vto +15V supply ISS= 400 µA/amplifier; independentofV+ Low distortion: 0.01%at10 kHz Slew rate: 1.1 V/µs
Applications
High-impedance bufferor preamplifier Precision current-to-voltage converter Long-term integrator Sample-and-hold circuit Peak detector Medical instrumentation Industrial controls Automotive sensors
Connection Diagram
8-Pin DIP/SO

Typical Application
Low-Leakage Sample-and-Hold
Ordering Information
Package Temperature Range NSC
Drawing
Transport
MediaIndustrial Commercial
8-Pin
Small Outline
LMC662AIM LMC662CM M08A Rail
LMC662AIMX LMC662CMX Tape and Reel
8-Pin
Molded DIP
LMC662AIN LMC662CN N08E Rail
April 2003
LMC662
CMOS
Dual
Operational
Amplifier
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