| Partno |
Mfg |
Dc |
Qty |
Available | Descript |
| LBR2012T1R0M |
TAIYO |
N/a |
4857 |
 |
WOUND CHIP INDUCTORS |
LBR2012T470K TAIYO
LBR2012T470M TAIYO
LBR2012T470M
LBR2518T100K TAIYO
LBR2012T1R0M , WOUND CHIP INDUCTORS
LBR2518T1R0M , WOUND CHIP INDUCTORS
LBS11503 , 114.99MHz SAW Filter 2MHz Bandwidth
LBSS123LT1G , N-CHANNEL POWER MOSFET
LBSS138LT1G , Power MOSFET 200 mAmps, 50 Volts N-hannel SOT-3
LE27ABZ ,VERY LOW DROP VOLTAGE REGULATORS WITH INHIBITELECTRICAL CHARACTERISTICS FOR LE15AB (refer to the test circuits, T = 25 C, jC = 0.1 μF, C = 2.2 μ ..
LE28C1001M-12 ,1MEG (131072words x 8bits) flash memoryFeatures• Highly reliable 2-layer polysilicon CMOS flashEEPROM process• Read and write operations u ..
LE28C1001T ,1MEG (131072 words x 8 bits) Flash MemoryFeatures• Highly reliable 2-layer polysilicon CMOS flashEEPROM process• Read and write operations u ..
