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L6204D013TRSTN/a985avaiDMOS DUAL FULL BRIDGE DRIVER


L6204D013TR ,DMOS DUAL FULL BRIDGE DRIVERABSOLUTE MAXIMUM RATINGSSymbol Parameter Value UnitV Supply Voltage 50 VSV , V Input or Enable Volt ..
L6205D ,DUAL DMOS FULL BRIDGE MOTOR DRIVERL6205DMOS DUAL FULL BRIDGE DRIVER■ OPERATING SUPPLY VOLTAGE FROM 8 TO 52V■5.6A OUTPUT PEAK CURRENT ..
L6205D013TR ,DMOS DUAL FULL BRIDGE DRIVERL6205DMOS DUAL FULL BRIDGE DRIVER■ OPERATING SUPPLY VOLTAGE FROM 8 TO 52V■ 5.6A OUTPUT PEAK CURRENT ..
L6205N ,DUAL DMOS FULL BRIDGE MOTOR DRIVERAPPLICATIONS■ BIPOLAR STEPPER MOTORBCD technology, which combines isolated DMOS■ DUAL OR QUAD DC MO ..
L6205N ,DUAL DMOS FULL BRIDGE MOTOR DRIVERABSOLUTE MAXIMUM RATINGSSymbol Parameter Test conditions Value UnitV Supply Voltage 60 VSV ,V Input ..
L6205N ,DUAL DMOS FULL BRIDGE MOTOR DRIVERfeatures a non-dissipative protection of themotor control
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L6204D013TR
DMOS DUAL FULL BRIDGE DRIVER
1/12
L6204

July 2003 SUPPLY VOLTAGE UP TO 48V RDS(ON) 1.2Ω L6204 (25°C) CROSS CONDUCTION PROTECTION THERMAL SHUTDOWN 0.5A DC CURRENT TTL/CMOS COMPATIBLE DRIVER HIGH EFFICIENCY CHOPPING MULTIPOWER BCD TECHNOLOGY
DESCRIPTION

The L6204 is a dual full bridge driver for motor
control applications realized in BCD technology
which combines isolated DMOS power transistors
with CMOS and Bipolar circuits on the same chip.
By using mixed technology it has been possible to
optimize the logic circuitry and the power stage to
achieve the best possible performance.
The logic inputs are TTL/CMOS compatible. Both
channels are controlled by a separate Enable.
Each bridge has a sense resistor to control the
currenrt level.
The L6204 is mounted in an 20-lead Powerdip and
SO 24+2+2 packages and the four center pins are
used to conduct heat to the PCB. At normal oper-
ating temperatures no external heatsink is re-
quired.
DMOS DUAL FULL BRIDGE DRIVER
BLOCK DIAGRAM
L6204
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PIN CONNECTIONS
PIN DESCRIPTION

(*) For SO package the pins 4, 5, 10, 11, 18, 19, 24 and 25 are not connected.
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L6204
ABSOLUTE MAXIMUM RATINGS
THERMAL DATA
ELECTRICAL CHARACTERISTCS
TRANSISTORS
LOGIC LEVELS
L6204
4/12
APPLICATION DIAGRAM
CIRCUIT DESCRIPTION

L6204 is a dual full bridge IC designed to drive DC motors, stepper motors and other inductive loads. Each
bridge has 4 power DMOS transistor with RDSon = 1.2Ω and the relative protection and control circuitry.
(see fig. 3)
The 4 half bridges can be controlled independently by means of the 4 inputs IN!, IN2, IN3, IN4 and 2 en-
able inputs ENABLE1 and ENABLE2.
External connections are provided so that sensing resistors can be added for constant current chopper
applications.
LOGIC DRIVE (*)
L = Low H = High X = Don’t care
(*) True table for the two full bridges
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L6204

CROSS CONDUCTION
Although the device guarantees the absence of cross-conduction, the presence of the intrinsic diodes in
the POWER DMOS structure causes the generation of current spikes on the sensing terminals.
This is due to charge-discharge phenomena in the capacitors C1 & C2 associated with the drain source
junctions (fig. 1). When the output switches from high to low, a current spike is generated associated with
the capacitor C1. On the low-to-high transition a spike of the same polarity is generated by C2, preceded
by a spike of the opposite polarity due to the charging of the input capacity of the lower POWER DMOS
transistor (see fig. 2).
Figure 1. Intrinsic Structures in the POWER MOS Transistors
Figure 2. Current Typical Spikes on the Sensing Pin
L6204
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TRANSISTOR OPERATION

ON STATE
When one of the POWER DMOS transistors is ON it can be considered as a resistor RDS(ON) = 1.2Ω at
a junction temperature of 25°C.
In this condition the dissipated power is given by :
PON = RDS(ON) · IDS2
The low RDS(ON) of the Multipower-BCD process can provide high currents with low power dissipation.
OFF STATE
When one of the POWER DMOS transistor is OFF the VDS voltage is equal to the supply voltage and only
the leakage current IDSS flows. The power dissipation during this period is given by :
POFF = VS · IDSS
TRANSITIONS
Like all MOS power transistors the DMOS POWER transistors have as intrinsic diode between their
source and drain that can operate as a fast freewheeling diode in switched mode applications.
During recirculation with the ENABLE input high, the voltage drop across the transistor is RDS(ON) . ID
and when the voltage reaches the diode voltage it is clamped to its characteristic.
When the ENABLE input is low, the POWER MOS is OFF and the diode carries all of the recirculation
current. The power dissipated in the transitional times in the cycle depends upon the voltage and current
waveforms in the application.
Ptrans = IDS(t) × VDS(t)
BOOTSTRAP CAPACITORS
To ensure the correct driving of high side drivers a voltage higher than VS is supplied on pin 20 (Vboot).
This bootstrap voltage is not needed for the lower power DMOS transistor because their sources are
grounded. To produce this voltage a charge pump method is used and mAde by two external capacitors
and two diodes. It can supply the 4 driving blocks of the high side drivers. Using an external capacitor the
turn-on speed of the high side driver is very high; furthermore with different capacitance values it is pos-
sible to adapt the device to different switching frequencies. It is also possible to operate two or more
L6204s using only 2 diodes and 2 capacitance for all the ICs; all the Vboot pins are connected to the Cs-
tore capacitance while the pin 11 (VCP) of just one L6204 is connect to Cpump, obviously all the L6204 ICs
have to be connected to the same VS. (see fig. 6)
Figure 3. Two Phase Chopping
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