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L6123
100 V DMOS SWITCHES
L6122 6123April 1993
100 V DMOS SWITCHES
ADVANCE DATA. OUTPUT VOLTAGE TO 100V. 0,5Ω RDS (on). SUPPLY VOLTAGE UP TO 60V. LOW INPUT CURRENT. TTL/CMOS COMPATIBLE INPUTS. HIGH SWITCHING FREQUENCY (200kHz)
DESCRIPTIONRealized with the Multipower-BCD mixed bipo-
lar/CMOS/DMOS process, the L6122/23 monolithic
three DMOS switch is designed for high current,
high voltage switching applications. Each of the
three switches is controlled by a logic input and all
three are controlled by a common enable input. All
inputs are TTL/CMOS compatible for direct connec-
tion to logic circuits. Each source is available for the
insertion of the sense resistors in current control ap-
plications.
Two versions are available : the L6122 mounted in
a Powerdip 14 + 3 + 3 package and the L6123 in a
15-lead Multiwatt package.
1/9
PIN CONNECTIONS (top view)
BLOCK DIAGRAM
ABSOLUTE MAXIMUM RATINGS(*) Pulse width ≤ 300 μs, duty cycle ≤ 10 %.
NOTE : ID, IDM, ISD, ISDM are given per channel.
THERMAL DATA
L6122 - L61232/9
SWITCHING TIMES RESISTIVE LOAD
Figure 1 : Test Circuit.
ELECTRICAL CHARACTERISTICS (Tj = 25o C, VCC = 40V, unless otherwise specified)
(*) Pulse test : pulse width = 300 μs, duty cycle = 2 %.
L6122 - L61233/9
Figure 2 : Waveforms.
Figure 3 : Static Drain-source on Resistance. Figure 4 : Normalized Breakdown Voltage vs. Temperature.
Figure 5 : Normalized on Resistance vs. Tempe- rature.
Figure 6 : Typical Source-drain Diode Forward Voltage.
L6122 - L61234/9
Figure 7 : Rth j-amb vs. Dissipated Power (Multiwatt).(*) Rth ≈ 9°C/W
Figure 8 : Transient Thermal Resistance for Single Pulses (Multiwatt).
L6122 - L61235/9
Figure 9 : Peak Transient Thermal Resistance vs. Pulse Width and Duty Cycle (Multiwatt).
L6122 - L61236/9
