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KST5179MTFFAIRCHILDN/a9000avaiNPN Epitaxial Silicon Transistor


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KST5179MTF
NPN Epitaxial Silicon Transistor
KST5179 KST5179 RF Amplifier Transistor 3 2 SOT-23 1 1. Base 2. Emitter 3. Collector NPN Epitaxial Silicon Transistor Absolute Maximum Ratings T =25°C unless otherwise noted a Symbol Parameter Value Units V Collector-Base Voltage 20 V CBO V Collector-Emitter Voltage 12 V CEO V Emitter-Base Voltage 2.5 V EBO I Collector Current 50 mA C P Collector Power Dissipation (T =25°C) 350 mW C a Derate above 25°C2.8mW/°C T Junction Temperature 150 °C J T Storage Temperature -55 ~ 150 °C STG Electrical Characteristics T =25°C unless otherwise noted a Symbol Parameter Test Condition Min. Max. Units BV Collector-Base Breakdown Voltage I =0.01mA, I =0 20 V CBO C E BV Collector-Emitter Breakdown Voltage I =3mA, I =0 12 V CEO C B BV Emitter Base Breakdown Voltage I =0.01mA, I =0 2.5 V EBO E C I Collector Cut-off Current V =15V, I =0 0.02 μA CBO CB E h DC Current Gain V =1V, I =3mA 25 FE CE C V (sat) Collector-Emitter Saturation Voltage I =10mA, I =1mA 0.4 V CE C B V (sat) Base-Emitter Saturation Voltage I =10mA, I =1mA 1 V BE C B f Current Gain Bandwidth Product V =6V, I =5mA, f=100MHz 900 MHz T CE C C Output Capacitance V =10V, I =0, f=0.1MHz to 1MHz 1 pF ob CB E h Small Signal Current Gain V =6V, I =2mA, f=1KHz 25 fe CE C NF Noise Figure V =6V, I =1.5mA, f=200MHz 4.5 dB CE C R =50Ω S G Power Gain V =6V, I =5mA, f=200MHz 15 dB PE CE C Marking 7H ©2002 Rev. A2, November 2002
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