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KST4125-MTF |KST4125MTFFAIRCHILN/a21000avaiPNP Epitaxial Silicon Transistor


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KST4125-MTF
PNP Epitaxial Silicon Transistor
KST4125 KST4125 General Purpose Transistor 3 2 SOT-23 1 1. Base 2. Emitter 3. Collector PNP Epitaxial Silicon Transistor Absolute Maximum Ratings T =25°C unless otherwise noted a Symbol Parameter Value Units V Collector-Base Voltage -30 V CBO V Collector-Emitter Voltage -30 V CEO V Emitter-Base Voltage -4 V EBO I Collector Current -200 mA C P Collector Power Dissipation 350 mW C T Storage Temperature 150 °C STG • Refer to KST3906 for graphs Electrical Characteristics T =25°C unless otherwise noted a Symbol Parameter Test Condition Min. Max. Units BV Collector-Base Breakdown Voltage I = -10μA, I =0 -30 V CBO C E BV * Collector-Emitter Breakdown Voltage I = -1mA, I =0 -30 V CEO C E BV Emitter-Base Breakdown Voltage I = -10μA, I =0 -4 V EBO E C I Collector Cut-off Current V = -20V, I =0 -50 nA CBO CB E I Emitter Cut-off Current V = -3V, I =0 -50 nA EBO EB C h * DC Current Gain V = -1V, I = -2.0mA 50 150 FE CE C V = -1V, I = -50mA 25 CE C V (sat) * Collector-Emitter Saturation Voltage I = -50mA, I = -5.0mA -0.4 V CE C B V (sat) * Base-Emitter Saturation Voltage I = -50mA, I = -5.0mA -0.95 V BE C B f Current Gain Bandwidth Product I = -10mA, V = -20V 200 MHz T C CE f=100MHz C Output Capacitance V = -5V, I =0, f=100KHz 4.5 pF ob CB E NF Noise Figure I = -100μA, V = -5V 5dB C CE R =1KΩ S f=10Hz to 15.7KHz * Pulse Test: PW≤300μs, Duty Cycle≤2% Marking ZD ©2002 Rev. A2, November 2002
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