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KST4123MTFFAIRCHILN/a39000avaiNPN Epitaxial Silicon Transistor


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KST4123MTF
NPN Epitaxial Silicon Transistor
KST4123 KST4123 General Purpose Transistor 3 2 SOT-23 1 1. Base 2. Emitter 3. Collector NPN Epitaxial Silicon Transistor Absolute Maximum Ratings T =25°C unless otherwise noted a Symbol Parameter Value Units V Collector-Base Voltage 40 V CBO V Collector-Emitter Voltage 30 V CEO V Emitter-Base Voltage 5 V EBO I Collector Current 200 mA C P Collector Power Dissipation 350 mW C T Storage Temperature 150 °C STG R (j-a) Thermal Resistance junction to Ambient 357 °C/W TH Electrical Characteristics T =25°C unless otherwise noted a Symbol Parameter Test Condition Min. Max. Units BV Collector-Base Breakdown Voltage I =10μA, I =0 40 V CBO C E BV * Collector-Emitter Breakdown Voltage I =1mA, I =0 30 V CEO C E BV Emitter-Base Breakdown Voltage I =10μA, I =0 5 V EBO E C I Collector Cut-off Current V =20V, I =0 50 nA CBO CB E I Emitter Cut-off Current V =3V, I =0 50 nA EBO EB C h * DC Current Gain V =1V, I =2mA 50 150 FE CE C V =1V, I =50mA 25 CE C V (sat) * Collector-Emitter Saturation Voltage I =50mA, I =5mA 0.3 V CE C B V (sat) * Base-Emitter Saturation Voltage I =50mA, I =5mA 0.95 V BE C B f Current Gain Bandwidth Product V =20V, I =10mA, f=100MHz 250 MHz T CE C C Input Capacitance V =0.5V, I =0, f=100KHz 8 pF ib BE C C Output Capacitance V =5V, I =0, f=100KHz 4 pF ob CB E NF Noise Figure V =5V, I =100μA, R =1KΩ 6dB CE C S Noise Bandwidth=10Hz to 15.7KHz * Pulse Test: PW≤300μs, Duty Cycle≤2% Marking 5B ©2002 Rev. A2, November 2002
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