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KST24SAMSUNGN/a5500avaiNPN Epitaxial Silicon Transistor


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KST24
NPN Epitaxial Silicon Transistor
KST24 KST24 VHF Mixer Transistor 3 2 SOT-23 1 1. Base 2. Emitter 3. Collector NPN Epitaxial Silicon Transistor Absolute Maximum Ratings T =25°C unless otherwise noted a Symbol Parameter Value Units V Collector-Base Voltage 40 V CBO V Collector-Emitter Voltage 30 V CEO V Emitter-Base Voltage 4 V EBO I Collector Current 100 mA C P Collector Power Dissipation 350 mW C T Storage Temperature 150 °C STG R (j-a) Thermal Resistance Junction to Ambient 357 °C/W TH • Refer to KSP24 for graphs Electrical Characteristics T =25°C unless otherwise noted a Symbol Parameter Test Condition Min. Typ. Max. Units BV Collector-Base Breakdown Voltage I =100μA, I =0 40 V CBO C E BV Collector-Emitter Breakdown Voltage I =1mA, I =0 30 V CEO C B BV Emitter-Base Breakdown Voltage I =10μA, I =0 4 V EBO E C I Collector Cut-off Current V =15V, I =0 50 nA CBO CB E h DC Current Gain V =10V, I =8mA 30 FE CE C f * Current Gain Bandwidth Product V =10V, I =8mA 400 620 MHz T CE C f=100MHz C Output Capacitance V =10V, I =0, f=1MHz 0.25 0.36 pF ob CB E G Conversion Gain (213MHz to 45MHz) I =8mA, V =20V 19 24 dB G C CC (60MHz to 45MHz) Oscillator Injection=150mV 24 29 dB * Pulse Test: PW≤300μs, Duty Cycle≤2% Marking 3A ©2001 Rev. A1, July 2001
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