KSR2003 ,PNP Epitaxial Silicon TransistorKSR2003KSR2003Switching Application (Bias Resistor Built In)• Switching circuit, Inverter, Interfac ..
KSR2003 ,PNP Epitaxial Silicon TransistorKSR2003KSR2003Switching Application (Bias Resistor Built In)• Switching circuit, Inverter, Interfac ..
KSR2004 , PNP (SWITCHING APPLICATION)
KSR2005 ,PNP (SWITCHING APPLICATION)
KSR2005 ,PNP (SWITCHING APPLICATION)
KSR2006 , PNP (SWITCHING APPLICATION)
LA17000M ,Tuner System IC with Built-in PLL for Car Audio Applicationsfeatures• AM double conversion (Up conversion method)• Enhanced FM-IF circuit(When there is interfe ..
LA1780 ,Single-Chip Tuner IC for Car RadiosFeatures• Improved noise reduction methodsPackage Dimensions— The FM front end provides excellent 3 ..
LA1780 ,Single-Chip Tuner IC for Car Radiosthermal characteristicsblocks; improvements designed to provide improved noise— Excellent FM signal ..
LA1780M ,Single-Chip Tuner IC for Car RadiosFeatures• Improved noise reduction methodsPackage Dimensions— The FM front end provides excellent 3 ..
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LA1784 ,Single-Chip Tuner IC for Car Radiosthermal characteristics3Mounted on a 40 · 80 · 1.3 mm17glass epoxy printed circuit board64Independe ..
KSR2003
PNP Epitaxial Silicon Transistor
KSR2003 KSR2003 Switching Application (Bias Resistor Built In) • Switching circuit, Inverter, Interface circuit, Driver Circuit • Built in bias Resistor (R =22KΩ, R =22KΩ) 1 2 • Complement to KSR1003 TO-92 1 1. Emitter 2. Collector 3. Base Equivalent Circuit C R1 B R2 PNP Epitaxial Silicon Transistor E Absolute Maximum Ratings T =25°C unless otherwise noted a Symbol Parameter Value Units V Collector-Base Voltage -50 V CBO V Collector-Emitter Voltage -50 V CEO V Emitter-Base Voltage -10 V EBO I Collector Current -100 mA C P Collector Power Dissipation 300 mW C T Junction Temperature 150 °C J T Storage Temperature -55 ~ 150 °C STG Electrical Characteristics T =25°C unless otherwise noted a Symbol Parameter Test Condition Min. Typ. Max. Units BV Collector-Base Breakdown Voltage I = -10μA, I =0 -50 V CBO C E BV Collector-Emitter Breakdown Voltage I = -100μA, I =0 -50 V CEO C B I Collector Cut-off Current V = -40V, I =0 -0.1 μA CBO CB E h DC Current Gain V = -5V, I = -5mA 70 FE CE C V (sat) Collector-Emitter Saturation Voltage I = -10mA, I = -0.5mA -0.3 V CE C B f Current Gain Bandwidth Product V = -10V, I = -5mA 200 MHz T CE C C Output Capacitance V = -10V, I =0 5.5 pF ob CB E f=1.0MHz V (off) Input Off Voltage V = -5V, I = -100μA-0.5 V I CE C V (on) Input On Voltage V = -0.3V, I = -5mA -3.0 V I CE C R Input Resistor 15 22 29 KΩ 1 R /R Resistor Ratio 0.9 1 1.1 1 2 ©2001 Rev. A1, July 2001
