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KSP8098 ,NPN Epitaxial Silicon TransistorKSP8098/8099KSP8098/8099Amplifier Transistor• Collector-Emitter Voltage: V = KSP8098: 60VCEOKSP8099 ..
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KSP92 ,PNP Epitaxial Silicon TransistorKSP92/93KSP92/93High Voltage TransistorTO-9211. Emitter 2. Base 3. CollectorPNP Epitaxial Silic ..
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KSP77
PNP Epitaxial Silicon Darlington Transistor
KSP75/76/77 KSP75/76/77 Darlington Transistor • Collector-Emitter Voltage: V = KSP75: 40V CES KSP76: 50V KSP77: 60V • Collector Power Dissipation: P (max)=625mW C TO-92 1 1. Emitter 2. Base 3. Collector PNP Epitaxial Silicon Darlington Transistor Absolute Maximum Ratings T =25°C unless otherwise noted a Symbol Parameter Value Units V Collector-Base Voltage CES : KSP75 -40 V : KSP76 -50 V : KSP77 -60 V V Emitter-Base Voltage -10 V EBO I Collector Current -500 mA C P Collector Power Dissipation 625 mW C T Junction Temperature 150 °C J T Storage Temperature -55~150 °C STG Electrical Characteristics T =25°C unless otherwise noted a Symbol Parameter Test Condition Min. Max. Units BV Collector-Base Breakdown Voltage I = -100μA, I =0 CEO C B : KSP75 -40 V : KSP76 -50 V : KSP77 -60 V BV Collector-Base Breakdown Voltage I = -100μA, I =0 CBO C E : KSP75 -40 V : KSP76 -50 V : KSP77 -60 V I Collector Cut-off Current nA CBO : KSP75 V = -30V, I =0 -100 nA CE E -100 nA : KSP76 V = -40V, I =0 CE E : KSP77 V = -50V, I =0 -100 nA CE E I Emitter Cut-off Current V = -10V, I =0 -100 nA EBO CE B I Collector Cut-off Current CES : KSP75 V = -30V, I =0 -500 nA CE E -500 nA : KSP76 V = -40V, I =0 CE E : KSP77 V = -50V, I =0 -500 nA CE E h DC Current Gain V = -5V, I = -10mA 10K FE CE C V = -5V, I = -100mA 10K CE C V (sat) Collector-Emitter Saturation Voltage I = -100mA, I = -0.1mA -1.5 V CE C B V (on) Base-Emitter On Voltage V = -5V, I = -100mA 2 V BE CE C ©2001 Rev. A1, July 2001
