KSP62 ,PNP Epitaxial Silicon Darlington TransistorKSP62/63/64KSP62/63/64Darlington Transistor• Collector-Emitter Voltage: V =KSP62: 20VCESKSP63/64: 3 ..
KSP76 ,PNP Epitaxial Silicon Darlington TransistorKSP75/76/77KSP75/76/77Darlington Transistor• Collector-Emitter Voltage: V = KSP75: 40VCESKSP76: 50V ..
KSP77 ,PNP Epitaxial Silicon Darlington TransistorKSP75/76/77KSP75/76/77Darlington Transistor• Collector-Emitter Voltage: V = KSP75: 40VCESKSP76: 50V ..
KSP8098 ,NPN Epitaxial Silicon TransistorKSP8098/8099KSP8098/8099Amplifier Transistor• Collector-Emitter Voltage: V = KSP8098: 60VCEOKSP8099 ..
KSP8099 ,NPN Epitaxial Silicon TransistorKSP8098/8099KSP8098/8099Amplifier Transistor• Collector-Emitter Voltage: V = KSP8098: 60VCEOKSP8099 ..
KSP92 ,PNP Epitaxial Silicon TransistorKSP92/93KSP92/93High Voltage TransistorTO-9211. Emitter 2. Base 3. CollectorPNP Epitaxial Silic ..
LA1177 ,Electronic Tuning-Use FM Front End for Car Radio, Home StereosOrdering number : EN2257BMonolithic Linear ICLA1177Electronic Tuning-Use FM Front Endfor Car Radio, ..
LA1178M ,FM Front End for Car Radio, Home Radio-UseFeatures• Excellent intermodulation characteristic (wide-band AGCcircuit)• On-chip local oscillatio ..
LA1180 ,MONOLITHIC LINEAR IC FM FRONT END FOR RADIO CASSETTE RECORDER USENo.1338c / LA1 180',l,t, MonoHFthic Linear TTdt _ FRONT ENDFOR R/uno-CASSETTE R tups UseThe LA11M i ..
LA1185 ,FM Front-end for Radio-cassette Recorder, Home Stereo ApplicationsOrdering number: EN1521DMonolithic Linear ICLA1185FM Front-end for Radio-cassette Recorder, HomeSte ..
LA1186 ,FM Front End for Radio-Cassette Recorders, Music CentersFeatures and FunctionsPackage Dimensions• Contains RF amplifier, MIX, OSC, AFC diode.unit: mm• Oper ..
LA1186N ,FM Front End for Radio-Cassette Recorders, Music CentersOrdering number : EN1840AMonolithic Linear ICLA1186NFM Front End for Radio-Cassette Recorders,Music ..
KSP62
PNP Epitaxial Silicon Darlington Transistor
KSP62/63/64 KSP62/63/64 Darlington Transistor • Collector-Emitter Voltage: V =KSP62: 20V CES KSP63/64: 30V • Collector Power Dissipation: P (max)=625mW C TO-92 1 1. Emitter 2. Base 3. Collector PNP Epitaxial Silicon Darlington Transistor Absolute Maximum Ratings T =25°C unless otherwise noted a Symbol Parameter Value Units V Collector-Base Voltage CBO : KSP62 -20 V : KSP63/64 -30 V V Collector-Emitter Voltage CEO : KSP62 -20 V : KSP63/64 -30 V V Emitter-Base Voltage -10 V EBO I Collector Current -500 mA C P Collector Power Dissipation 625 mW C T Junction Temperature 150 °C J T Storage Temperature -55~150 °C STG Electrical Characteristics T =25°C unless otherwise noted a Symbol Parameter Test Condition Min. Max. Units BV Collector-Emitter Breakdown Voltage I = -100μA, I =0 CES C B : KSP62 -20 V : KSP63/64 -30 V I Collector Cut-off Current CBO : KSP62 V = -15V, I =0 -100 nA CB E : KSP63/64 V = -30V, I =0 -100 nA CB E I Emitter Cut-off Current V = -10V, I =0 -100 nA EBO BE C h * DC Current Gain FE : KSP62 V = -5V, I = -10mA 20K CE C : KSP63 5K : KSP64 10K : KSP63 V = -5V, I = -100mA 10K CE C : KSP64 20K V (sat) * Collector-Emitter Saturation Voltage CE : KSP62 I = -10mA, I = -0.01mA -1.0 V C B : KSP63/64 I = -100mA, I = -0.1mA -1.5 V C B V (on) * Base-Emitter On Voltage BE : KSP62 V = -5V, I = -10mA -1.4 V CE C : KSP63/64 V = -5V, I = -100mA -2 V CE C f Current Gain Bandwidth Product V = -5V, I = -100mA 125 MHz T CE C : KSP63/64 f=100MHz * Pulse Test: PW≤300μs, Duty Cycle≤2% ©2001 Rev. A1, July 2001
