KSH112 ,NPN Silicon Darlington TransistorApplications (No Suffix)• Straight Lead (I-PAK, “ - I “ Suffix)D-PAK I-PAK11• Electrically Similar ..
KSH112ITU ,Product informationApplications• High DC Current Gain• Built-in a Damper Diode at E-C• Lead Formed for Surface Mount
KSH112-ITU ,Product informationKSH112KSH112D-PAK for Surface Mount
KSH112TM ,NPN Silicon Darlington TransistorApplications (No Suffix)• Straight Lead (I-PAK, “ - I “ Suffix)D-PAK I-PAK11• Electrically Similar ..
KSH117 ,PNP Silicon Darlington TransistorApplications (No Suffix)• Straight Lead (I-PAK, “ - I “ Suffix)D-PAK I-PAK11• Electrically Similar ..
KSH117-I ,PNP Silicon Darlington TransistorApplications (No Suffix)• Straight Lead (I-PAK, “ - I “ Suffix)D-PAK I-PAK11• Electrically Similar ..
L9848TR ,OCTAL CONFIGURABLE LOW/HIGH SIDE DRIVERL9848OCTAL CONFIGURABLE LOW/HIGH SIDE DRIVER■ Configurable up to 6 high side drivers■ R =max.1.5Ω@T ..
L9856 ,High voltage high side driverFeatures■ High voltage rail up to 160 V■ dV/dt immunity ±50 V/nsec in full temperature range■ Drive ..
L9856-TR ,High voltage high side driverElectrical characteristics . 72.5 Logic table . . . 103 Timing diagrams . . . . . ..
L98SI ,OCTAL SERIAL SOLENOID DRIVERABSOLUTE MAXIMUM RATINGSSymbol Parameter Value UnitV DC Logic Supply – 0.7 7 VDDV Output Voltage in ..
L9903 ,MOTOR BRIDGE CONTROLLERBLOCK DIAGRAM10VSRCPRef erenceVCC-1ST BIAS+11Charge CP=V pumpSTH13CB112fST GH1VCCOvervoltage14Under ..
L9903TR ,MOTOR BRIDGE CONTROLLERABSOLUTE MAXIMUM RATINGSSymbol Parameter Value UnitV , V Bootstrap voltage -0.3 to 40 VCB1 CB2I , I ..
KSH112
NPN Silicon Darlington Transistor
KSH112 KSH112 D-PAK for Surface Mount Applications • High DC Current Gain • Built-in a Damper Diode at E-C • Lead Formed for Surface Mount Applications (No Suffix) • Straight Lead (I-PAK, “ - I “ Suffix) D-PAK I-PAK 11 • Electrically Similar to Popular TIP112 1.Base 2.Collector 3.Emitter NPN Silicon Darlington Transistor Absolute Maximum Ratings T =25°C unless otherwise noted C Equivalent Circuit C Symbol Parameter Value Units V Collector-Base Voltage 100 V CBO V Collector-Emitter Voltage 100 V CEO B V Emitter-Base Voltage 5 V EBO I Collector Current (DC) 2 A C I Collector Current (Pulse) 4 A CP I Base Current 50 mA B R1 R2 P Collector Dissipation (T =25°C) 20 W C C E Collector Dissipation (T =25°C) 1.75 W R11 ≅ 0kΩ a R20 ≅ .6kΩ T Junction Temperature 150 °C J T Storage Temperature - 65 ~ 150 °C STG Electrical Characteristics T =25°C unless otherwise noted C Symbol Parameter Test Condition Min. Max. Units V (sus) Collector-Emitter Sustaining Voltage I = 30mA, I = 0 100 V CEO C B I Collector Cut-off Current V = 50V, I = 0 20 μA CEO CE B I Collector Cut-off Current V = 100V, I = 0 20 μA CBO CB B I Emitter Cut-off Current V = 5V, I = 0 2 mA EBO EB C h * DC Current Gain V = 3V, I = 0.5A 500 FE CE C V = 3V, I = 2A 1000 12K CE C V = 3V, I = 4A 200 CE C V (sat) * Collector-Emitter Saturation Voltage I = 2A, I = 8mA 2 V CE C B I = 4A, I = 40mA 3 V C B V (sat) * Base-Emitter Saturation Voltage I = 4A, I = 40mA 4 V BE C B V (on) * Base-Emitter ON Voltage V = 3A, I = 2A 2.8 V BE CE C f Current Gain Bandwidth Product V = 10V, I = 0.75A 25 MHz T CE C C Output Capacitance V = 10V, I = 0 100 pF ob CB E f = 0.1MHz * Pulse Test: PW≤300μs, Duty Cycle≤2% ©2001 Rev. A3, June 2001
