KSE340 ,NPN Epitaxial Silicon TransistorKSE340KSE340High Voltage General Purpose
KSE340. ,NPN Epitaxial Silicon TransistorApplications• High Collector-Emitter Breakdown Voltage • Suitable for Transformer• Complement to KS ..
KSE340S ,NPN Epitaxial Silicon TransistorKSE340KSE340High Voltage General Purpose
KSE340STU ,NPN Epitaxial Silicon TransistorApplications• High Collector-Emitter Breakdown Voltage • Suitable for Transformer• Complement to KS ..
KSE350 ,PNP Epitaxial Silicon TransistorKSE350KSE350High Voltage General Purpose
KSE350S ,PNP Epitaxial Silicon TransistorApplications• High Collector-Emitter Breakdown Voltage • Suitable for Transformer• Complement to KS ..
L9820D ,HIGH SIDE DRIVERL9820HIGH SIDE DRIVERADVANCE DATAOPERATING SUPPLY VOLTAGE UP TO 25VMULTIPOWER BCD TECHNOLOGYDC CURR ..
L9820D013TR ,HIGH SIDE DRIVERL9820®HIGH SIDE DRIVEROPERATING SUPPLY VOLTAGE UP TO 25VMULTIPOWER BCD TECHNOLOGYDC CURRENT 0.3AR < ..
L9821 ,HIGH SIDE DRIVERABSOLUTE MAXIMUM RATINGSSymbol Parameter ValueV Max Forward Voltage 50VdcSPositive Transient Peak V ..
L9822E ,OCTAL SERIAL SOLENOID DRIVERABSOLUTE MAXIMUM RATINGSSymbol Parameter Value UnitV DC Logic Supply – 0.7 7 VCCV Output Voltage – ..
L9822EPD ,OCTAL SERIAL SOLENOID DRIVERL9822E®OCTAL SERIAL SOLENOID DRIVER. EIGHT LOW R DMOS OUTPUTS DSonMULTIPOWER BCD TECHNOLOGY(0.5Ω AT ..
L9822EPD013TR ,OCTAL SERIAL SOLENOID DRIVERELECTRICAL CHARACTERISTICS (Continued)Symbol Parameter Test Conditions Min. Typ. Max. UnitINPUT BUF ..
KSE340-KSE340.
NPN Epitaxial Silicon Transistor
KSE340 KSE340 High Voltage General Purpose Applications • High Collector-Emitter Breakdown Voltage • Suitable for Transformer • Complement to KSE350 TO-126 1 1. Emitter 2.Collector 3.Base NPN Epitaxial Silicon Transistor Absolute Maximum Ratings T =25°C unless otherwise noted C Symbol Parameter Value Units V Collector-Base Voltage 300 V CBO V Collector-Emitter Voltage 300 V CEO V Emitter-Base Voltage 5 V EBO I Collector Current 500 mA C P Collector Dissipation (T =25°C) 20 W C C T Junction Temperature 150 °C J T Storage Temperature - 65 ~ 150 °C STG Electrical Characteristics T =25°C unless otherwise noted C Symbol Parameter Test Condition Min. Max. Units BV Collector-Emitter Breakdown Voltage I = 1mA, I = 0 300 V CEO C B I Collector Cut-off Current V = 300V, I =0 100 μA CBO CB E I Emitter Cut-off Current V = 3V, I = 0 100 μA EBO BE C h DC Current Gain V = 10V, I = 50mA 30 240 FE CE C ©2000 Fairchild Semiconductor International Rev. A1, December 2000
