KSC838-OTA ,NPN Epitaxial Silicon TransistorKSC838KSC838FM Radio RF AMP, MIX, CONV, OSC, IF AMP• High Current Gain Bandwidth Product : f =250MH ..
KSC945 ,NPN (AUDIO/ HIGH FREQUENCY AMPLIFIER/ OSC.)
KSC945CG ,Audio Frequency Amplifier & High Frequency OSC.KSC945KSC945Audio Frequency Amplifier & High Frequency OSC.• Complement to KSA733• Collector-Base V ..
KSC945CG ,Audio Frequency Amplifier & High Frequency OSC.KSC945KSC945Audio Frequency Amplifier & High Frequency OSC.• Complement to KSA733• Collector-Base V ..
KSC945C-GTA ,NPN Epitaxial Silicon TransistorKSC945KSC945Audio Frequency Amplifier & High Frequency OSC.• Complement to KSA733• Collector-Base V ..
KSC945CO ,Audio Frequency Amplifier & High Frequency OSC.KSC945KSC945Audio Frequency Amplifier & High Frequency OSC.• Complement to KSA733• Collector-Base V ..
L9338DTR ,QUAD LOW SIDE DRIVERELECTRICAL CHARACTERISTICS (Refer to the test circuit, unless otherwise specified.)Symbol Parameter ..
L9338MD ,QUAD LOW SIDE DRIVERThermal characteristics of SO20"OPERATING CONDITIONS (The
L9338MD/TR ,QUAD LOW SIDE DRIVERelectrical characteristics are valid within the below defined operatingranges, unless otherwise spe ..
L9339MD ,QUAD LOW SIDE DRIVERABSOLUTE MAXIMUM RATINGS (no damage or latch)Symbol Parameter Value UnitV Supply voltage ..
L9339MD ,QUAD LOW SIDE DRIVERelectrical characteristics are valid within the below defined Operating Conditions, unless otherwis ..
L9341 ,QUAD LOW SIDE DRIVERELECTRICAL CHARACTERISTICS (Unless otherwise specified: 8V ≤ V ≤ 24V; 4.7V ≤ V ≤ 5.3V; –S CC40 °C ≤ ..
KSC838-OTA
NPN Epitaxial Silicon Transistor
KSC838 KSC838 FM Radio RF AMP, MIX, CONV, OSC, IF AMP • High Current Gain Bandwidth Product : f =250MHz (TYP) T • Suffix “-C” means Center Collector (1. Emitter 2. Collector 3. Base) TO-92 1 1. Emitter 2. Base 3. Collector NPN Epitaxial Silicon Transistor Absolute Maximum Ratings T =25°C unless otherwise noted a Symbol Parameter Value Units V Collector-Base Voltage 35 V CBO V Collector-Emitter Voltage 30 V CEO V Emitter-Base Voltage 4 V EBO I Collector Current 30 mA C P Collector Power Dissipation 250 mW C T Junction Temperature 150 °C J T Storage Temperature -55 ~ 150 °C STG Electrical Characteristics T =25°C unless otherwise noted a Symbol Parameter Test Condition Min. Typ. Max. Units BV Collector-Base Breakdown Voltage I =100μA, I =0 35 V CBO C E BV Collector-Emitter Breakdown Voltage I =5mA, I =0 30 V CEO C B BV Emitter-Base Breakdown Voltage I =10μA, I =0 4 V EBO E C I Collector Cut-off Current V =30V, I =0 0.1 μA CBO CB E I Emitter Cut-off Current V =4V, I =0 0.1 μA EBO EB C h DC Current Gain V =12V, I =2mA 40 240 FE CE C V (on) Base-Emitter On Voltage V =6V, I=1mA 0.650.700.75 V BE CE C V (sat) Collector-Emitter Saturation Voltage I =10mA, I =1mA 0.1 0.4 V CE C B f Current Gain Bandwidth Product V =10V, I =1mA 100 250 MHz T CE C C Output Capacitance V =10V, I =0, f=1MHz 2.0 3.2 pF ob CB E h Classification FE Classification R O Y h 40 ~ 80 70 ~ 140 120 ~ 240 FE ©2002 Rev. A2, September 2002
