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KSC5504DTMFAIN/a800avaiNPN Triple Diffused Planar Silicon Transistor
KSC5504DTTUFAIRCHILN/a1703avaiNPN Triple Diffused Planar Silicon Transistor


KSC5504DTTU ,NPN Triple Diffused Planar Silicon TransistorKSC5504D/KSC5504DTKSC5504D/KSC5504DTD2-PAKEquivalent CircuitHigh Voltage High Speed Power Switch CA ..
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KSC5504DTM-KSC5504DTTU
NPN Triple Diffused Planar Silicon Transistor
KSC5504D/KSC5504DT KSC5504D/KSC5504DT D2-PAK Equivalent Circuit High Voltage High Speed Power Switch C Application 1 • Wide Safe Operating Area TO-220 • Built-in Free-Wheeling Diode B • Suitable for Electronic Ballast Application • Small Variance in Storage Time • Two Package Choices : D2-PAK or TO-220 E 1 1.Base 2.Collector 3.Emitter NPN Triple Diffused Planar Silicon Transistor Absolute Maximum Ratings T =25°C unless otherwise noted C Symbol Parameter Value Units V Collector-Base Voltage 1200 V CBO V Collector-Emitter Voltage 600 V CEO V Emitter-Base Voltage 12 V EBO I Collector Current (DC) 4 A C I *Collector Current (Pulse) 8 A CP I Base Current (DC) 2 A B I *Base Current (Pulse) 4 A BP P Collector Dissipation (T =25°C) 75 W C C T Junction Temperature 150 °C J T Storage Temperature - 65 ~ 150 °C STG E Avalanche Energy(T =25°C) 3 mJ AS j * Pulse Test : Pulse Width = 5ms, Duty Cycle ≤ 10% Thermal Characteristics T =25°C unless otherwise noted C Symbol Characteristics Rating Unit R Thermal Resistance Junction to Case 1.65 °C/W θjc R Junction to Ambient 62.5 θja T Maximun Lead Temperature for Soldering Purpose 270 °C L : 1/8” from Case for 5 seconds ©2001 Rev. A1, June 2001
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