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KSC5027-O |KSC5027OFSCN/a89avaiNPN Silicon Transistor
KSC5027-R |KSC5027RFSCN/a36avaiNPN Silicon Transistor
KSC5027-R |KSC5027RFairchildN/a5000avaiNPN Silicon Transistor
KSC5027-RTU |KSC5027RTUFAIRCHILN/a1630avaiNPN Silicon Transistor


KSC5027-R ,NPN Silicon TransistorKSC5027KSC5027High Voltage and High Reliability• High Speed Switching•Wide SOATO-22011.Base 2.Co ..
KSC5027-R ,NPN Silicon TransistorKSC5027KSC5027High Voltage and High Reliability• High Speed Switching•Wide SOATO-22011.Base 2.Co ..
KSC5027-RTU ,NPN Silicon TransistorKSC5027KSC5027High Voltage and High Reliability• High Speed Switching•Wide SOATO-22011.Base 2.Co ..
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KSC5027-O-KSC5027-R-KSC5027-RTU
NPN Silicon Transistor
KSC5027 KSC5027 High Voltage and High Reliability • High Speed Switching •Wide SOA TO-220 1 1.Base 2.Collector 3.Emitter NPN Silicon Transistor Absolute Maximum Ratings T =25°C unless otherwise noted C Symbol Parameter Value Units V Collector-Base Voltage 1100 V CBO V Collector-Emitter Voltage 800 V CEO V Emitter-Base Voltage 7 V EBO I Collector Current (DC) 3 A C I Collector Current (Pulse) 10 A CP I Base Current 1.5 A B P Collector Dissipation ( T =25°C) 50 W C C T Junction Temperature 150 °C J T Storage Temperature - 55 ~ 150 °C STG Electrical Characteristics T =25°C unless otherwise noted C Symbol Parameter Test Condition Min. Typ. Max. Units BV Collector-Base Breakdown Voltage I = 1mA, I = 0 1100 V CBO C E BV Collector-Emitter Breakdown Voltage I = 5mA, I = 0 800 V CEO C B BV Emitter-Base Breakdown Voltage I = 1mA, I = 0 7 V EBO E C V (sus) Collector-Emitter Sustaining Voltage I = 1.5A, I = -I = 0.3A 800 V CEX C B1 B2 L = 2mH, Clamped I Collector Cut-off Current V = 800V, I = 0 10 μA CBO CB E I Emitter Cut-off Current V = 5V, I = 0 10 μA EBO EB C h DC Current Gain V = 5V, I = 0.2A 10 40 FE1 CE C h V = 5V, I = 1A 8 FE2 CE C V (sat) Collector-Emitter Saturation Voltage I = 1.5A, I = 0.3A 2 V CE C B V (sat) Base-Emitter Saturation Voltage I = 1.5A, I = 0.3A 1.5 V BE C B C Output Capacitance V = 10V, I = 0, f = 1MHz 60 pF ob CB E f Current Gain Bandwidth Product V = 10V, I = 0.2A 15 MHz T CE C t Turn ON Time V = 400V 0.5 μs ON CC I = 5I = -2.5I = 2A C B1 B2 t Storage Time 3 μs STG R = 200Ω L t Fall Time 0.3 μs F h Classification FE Classification N R O h 10 ~ 20 15 ~ 30 20 ~ 40 FE1 ©2001 Rev. A1, June 2001
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