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KSC3503DSFAIRCHILDN/a405avaiNPN Epitaxial Silicon Transistor
KSC3503DSFSCN/a8000avaiNPN Epitaxial Silicon Transistor
KSC3503-D-S |KSC3503DSSECN/a40avaiNPN Epitaxial Silicon Transistor
KSC3503ESTU仙童N/a4799avaiNPN Epitaxial Silicon Transistor


KSC3503DS ,NPN Epitaxial Silicon TransistorKSC3503KSC3503CRT Display, Video Output High Voltage : V =300VCEO Low Reverse Transfer Capacitanc ..
KSC3503DS ,NPN Epitaxial Silicon TransistorKSC3503KSC3503CRT Display, Video Output High Voltage : V =300VCEO Low Reverse Transfer Capacitanc ..
KSC3503-D-S ,NPN Epitaxial Silicon TransistorKSC3503KSC3503CRT Display, Video Output High Voltage : V =300VCEO Low Reverse Transfer Capacitanc ..
KSC3503ESTU ,NPN Epitaxial Silicon TransistorKSC3503KSC3503CRT Display, Video Output High Voltage : V =300VCEO Low Reverse Transfer Capacitanc ..
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L9308 ,DUAL LOW SIDE DRIVERBLOCK DIAGRAMOctober 1990 1/7This is advanced information on a new product now in development or un ..


KSC3503DS-KSC3503-D-S-KSC3503ESTU
NPN Epitaxial Silicon Transistor
KSC3503 KSC3503 CRT Display, Video Output  High Voltage : V =300V CEO  Low Reverse Transfer Capacitance : C =1.8pF @ V =30V re CB TO-126 1 1. Emitter 2.Collector 3.Base NPN Epitaxial Silicon Transistor Absolute Maximum Ratings T =25°C unless otherwise noted C Symbol Parameter Value Units V Collector-Base Voltage 300 V CBO V Collector-Emitter Voltage 300 V CEO V Emitter-Base Voltage 5 V EBO I Collector Current (DC) 100 mA C I Collector Current (Pulse) 200 mA CP P Collector Dissipation (T =25°C) 7 W C C P Collector Dissipation (T =25°C) 1.2 W C A T Junction Temperature 150 °C J T Storage Temperature - 55 ~ 150 °C STG Electrical Characteristics T =25°C unless otherwise noted C Symbol Parameter Test Condition Min. Typ. Max. Units BV Collector-Base Breakdown Voltage I = 10μA, I = 0 300 V CBO C E BV Collecto- Emitter Breakdown Voltage I = 1mA, I = 0 300 V CEO C B BV Emitter-Base Breakdown Voltage I = 10μA, I = 0 5 V EBO E C I Collector Cut-off Current V = 200V, I = 0 0.1 μA CBO CB E I Emitter Cut-off Current V = 4V, I = 0 0.1 μA EBO EB C h DC Current Gain V = 10V, I = 10mA 40 320 FE CE C V (sat) Collector-Emitter Saturation Voltage I = 20mA, I = 2mA 0.6 V CE C B V (sat) Base-Emitter Saturation Voltage I = 20mA, I = 2mA 1 V BE C B f Current Gain Bandwidth Product V = 30V, I = 10mA 150 MHz T CE C C Output Capacitance V = 30V, f = 1MHz 2.6 pF ob CB C Reverse Transfer Capacitance V = 30V, f = 1MHz 1.8 pF re CB h Classification FE Classification C D E F h 40 ~ 80 60 ~ 120 100 ~ 200 160 ~ 320 FE ©2000 Fairchild Semiconductor International Rev. A, February 2000
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