KSC3265YMTF ,NPN Epitaxial Silicon TransistorKSC3265KSC3265Low Frequency Amplifier3• Complement to KSA129821SOT-231. Base 2. Emitter 3. Coll ..
KSC3265-Y-MTF ,NPN Epitaxial Silicon TransistorKSC3265KSC3265Low Frequency Amplifier3• Complement to KSA129821SOT-231. Base 2. Emitter 3. Coll ..
KSC3265-Y-MTF ,NPN Epitaxial Silicon TransistorKSC3265KSC3265Low Frequency Amplifier3• Complement to KSA129821SOT-231. Base 2. Emitter 3. Coll ..
KSC3296 ,NPN Epitaxial Silicon TransistorApplications Complement to KSA1304TO-220F11.Base 2.Collector 3.EmitterNPN Epitaxial Silicon ..
KSC3296YTU ,NPN Epitaxial Silicon TransistorKSC3296KSC3296Power Amplifier
KSC3296-YTU ,NPN Epitaxial Silicon TransistorApplications Complement to KSA1304TO-220F11.Base 2.Collector 3.EmitterNPN Epitaxial Silicon ..
L9177 ,Specific Functions, Engine Control IcsFeatures– Minimum guaranteed output current 500 mA - full step Supply voltage from 6 V to 18 V– Ro ..
L9222D ,QUAD INVERTING TRANSISTOR SWITCHFEATURESFigure 1. Packages■ OUTPUT VOLTAGE TO 50V■ OUTPUT CURRENT TO 1.2A■ VERY LOW SATURATION VOLT ..
L9305A ,DUAL HIGH CURRENT RELAY DRIVERblock diagram unless otherwise5 ambspecified)Symbol Parameter Test Conditions Min. Typ. Max. UnitV5 ..
L9308 ,DUAL LOW SIDE DRIVERL9308DUAL LOW SIDE DRIVER. DARLINGTON OUTPUT STAGE. INPUT COMPARATOR WITH WIDE RANGECOMMON MODE OPE ..
L9308 ,DUAL LOW SIDE DRIVERL9308DUAL LOW SIDE DRIVER. DARLINGTON OUTPUT STAGE. INPUT COMPARATOR WITH WIDE RANGECOMMON MODE OPE ..
L9308 ,DUAL LOW SIDE DRIVERBLOCK DIAGRAMOctober 1990 1/7This is advanced information on a new product now in development or un ..
KSC3265YMTF-KSC3265-Y-MTF
NPN Epitaxial Silicon Transistor
KSC3265 KSC3265 Low Frequency Amplifier 3 • Complement to KSA1298 2 1 SOT-23 1. Base 2. Emitter 3. Collector NPN Epitaxial Silicon Transistor Absolute Maximum Ratings T =25°C unless otherwise noted a Symbol Parameter Value Units V Collector-Base Voltage 30 V CBO V Collector-Emitter Voltage 25 V CEO V Emitter-Base Voltage 5 V EBO I Collector Current 800 mA C I Base Current 160 mA B P Collector Power Dissipation 200 mW C T Junction Temperature 150 °C J T Storage Temperature -55 ~ 150 °C STG ∗ Refer to KSD261 for graphs Electrical Characteristics T =25°C unless otherwise noted a Symbol Parameter Test Condition Min. Typ. Max. Units Collector-Emitter Breakdown Voltage I =10mA, I =0 25 V BV CEO C B BV Emitter-Base Breakdown Voltage I =1mA, I =0 5 V EBO E C I Collector Cut-off Current V =30V, I =0 100 nA CBO CB E I Emitter Cut-off Current V =5V, I =0 100 nA EBO EB C h DC Current Gain V =1V, I =100mA 100 320 FE1 CE C h V =6V, I =800mA 40 FE2 CE C V (sat) Collector-Emitter Saturation Voltage I =500mA, I =20mA 0.4 V CE C B V (on) Base-Emitter On Voltage V =1V, I =10mA 0.5 0.8 V BE CE C f Current Gain Bandwidth Product V =5V, I =10mA 120 MHz T CE C C Output Capacitance V =10V, I =0, f=1MHz 13 pF ob CB E h Classification FE Classification O Y h 100 ~ 200 160 ~ 320 FE Marking K1O h grade FE ©2002 Rev. A2, September 2002
