KSC2715YMTF ,NPN Epitaxial Silicon TransistorKSC2715KSC2715FM RADIO AMP, MIX, CONV, OSC, IF AMP321SOT-231. Base 2. Emitter 3. CollectorNPN E ..
KSC2752 ,NPN Epitaxial Silicon TransistorKSC2752KSC2752High SpeedHigh Voltage Swiching Industrial UseTO-1261NPN Epitaxial Silicon Transistor ..
KSC2752 ,NPN Epitaxial Silicon TransistorKSC2752KSC2752High SpeedHigh Voltage Swiching Industrial UseTO-1261NPN Epitaxial Silicon Transistor ..
KSC2752 ,NPN Epitaxial Silicon TransistorKSC2752KSC2752High SpeedHigh Voltage Swiching Industrial UseTO-1261NPN Epitaxial Silicon Transistor ..
KSC2752-O-STU ,NPN Epitaxial Silicon TransistorKSC2752KSC2752High SpeedHigh Voltage Swiching Industrial UseTO-1261NPN Epitaxial Silicon Transistor ..
KSC2752-O-STU ,NPN Epitaxial Silicon TransistorKSC2752KSC2752High SpeedHigh Voltage Swiching Industrial UseTO-1261NPN Epitaxial Silicon Transistor ..
L9177 ,Specific Functions, Engine Control IcsFeatures– Minimum guaranteed output current 500 mA - full step Supply voltage from 6 V to 18 V– Ro ..
L9222D ,QUAD INVERTING TRANSISTOR SWITCHFEATURESFigure 1. Packages■ OUTPUT VOLTAGE TO 50V■ OUTPUT CURRENT TO 1.2A■ VERY LOW SATURATION VOLT ..
L9305A ,DUAL HIGH CURRENT RELAY DRIVERblock diagram unless otherwise5 ambspecified)Symbol Parameter Test Conditions Min. Typ. Max. UnitV5 ..
L9308 ,DUAL LOW SIDE DRIVERL9308DUAL LOW SIDE DRIVER. DARLINGTON OUTPUT STAGE. INPUT COMPARATOR WITH WIDE RANGECOMMON MODE OPE ..
L9308 ,DUAL LOW SIDE DRIVERL9308DUAL LOW SIDE DRIVER. DARLINGTON OUTPUT STAGE. INPUT COMPARATOR WITH WIDE RANGECOMMON MODE OPE ..
L9308 ,DUAL LOW SIDE DRIVERBLOCK DIAGRAMOctober 1990 1/7This is advanced information on a new product now in development or un ..
KSC2715YMTF
NPN Epitaxial Silicon Transistor
KSC2715 KSC2715 FM RADIO AMP, MIX, CONV, OSC, IF AMP 3 2 1 SOT-23 1. Base 2. Emitter 3. Collector NPN Epitaxial Silicon Transistor Absolute Maximum Ratings T =25°C unless otherwise noted a Symbol Parameter Value Units V Collector-Base Voltage 35 V CBO V Collector-Emitter Voltage 30 V CEO V Emitter-Base Voltage 4 V EBO I Collector Current 50 mA C P Collector Power Dissipation 150 mW C T Junction Temperature 150 °C J T Storage Temperature -55 ~ 150 °C STG Electrical Characteristics T =25°C unless otherwise noted a Symbol Parameter Test Condition Min. Typ. Max. Units I Collector Cut-off Current V =35V, I =0 0.1 μA CBO CB E I Emitter Cut-off Current V =4V, I =0 1 μA EBO EB C h DC Current Gain V =12V, I =2mA 70 240 FE CE C V (sat) Collector-Emitter Saturation Voltage I =10mA, I=1mA 0.4V CE C B V (on) Base-Emitter On Voltage I =10mA, I=1mA 1.0V BE C B f Current Gain Bandwidth Product V =10V, I =1mA 100 400 MHz T CE C C Output Capacitance V =10V, I =0, f=1MHz 2 3.2 pF ob CB E h Classification FE Classification O Y h 70 ~ 140 120 ~ 240 FE Marking B1O h grade FE ©2004 Rev. B2, May 2004
