KSC2688YSTU ,NPN Epitaxial Silicon TransistorKSC2688KSC2688Color TV Chroma Output & Video OutputTO-12611. Emitter 2.Collector 3.BaseNPN Ep ..
KSC2690A-O , Audio Frequency High Frequency Power Amplifier
KSC2690A-Y , Audio Frequency High Frequency Power Amplifier
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KSC2752 ,NPN Epitaxial Silicon TransistorKSC2752KSC2752High SpeedHigh Voltage Swiching Industrial UseTO-1261NPN Epitaxial Silicon Transistor ..
L9177 ,Specific Functions, Engine Control IcsFeatures– Minimum guaranteed output current 500 mA - full step Supply voltage from 6 V to 18 V– Ro ..
L9222D ,QUAD INVERTING TRANSISTOR SWITCHFEATURESFigure 1. Packages■ OUTPUT VOLTAGE TO 50V■ OUTPUT CURRENT TO 1.2A■ VERY LOW SATURATION VOLT ..
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KSC2688OS-KSC2688YS-KSC2688YSTU
NPN Epitaxial Silicon Transistor
KSC2688 KSC2688 Color TV Chroma Output & Video Output TO-126 1 1. Emitter 2.Collector 3.Base NPN Epitaxial Silicon Transistor Absolute Maximum Ratings T =25°C unless otherwise noted C Symbol Parameter Value Units V Collector-Base Voltage 300 V CBO V Collector-Emitter Voltage 300 V CEO V Emitter-Base Voltage 5 V EBO I Collector Current 200 mA C P Collector Dissipation (T =25°C) 1.25 W C a P Collector Dissipation (T =25°C) 10 W C C T Junction Temperature 150 °C J T Storage Temperature - 55 ~ 150 °C STG Electrical Characteristics T =25°C unless otherwise noted C Symbol Parameter Test Condition Min. Typ. Max. Units BV Collector-Base Breakdown Voltage I =0.1mA, I = 0 300 V CBO C E BV Collector-Emitter Breakdown Voltage I = 5mA, I = 0, R = ∞ 300 V CEO C B BE BV Emitter-Base Breakdown Voltage I = 0.1mA, I = 0 5 V EBO E C I Collector Cut-off Current V = 200V, I = 0 100 μA CBO CB E I Emitter Cut-off Current V = 4V, I = 0 100 μA EBO EB C h * DC Current Gain V = 10V, I = 10mA 40 250 FE CE C V (sat) * Collector-Emitter Saturation Voltage I = 50mA, I = 5mA 1.5 V CE C B f Current Gain Bandwidth Product V = 30V, I = -10mA 50 80 MHz T CE E C Feed Back Capacitance V = 30V, I = 0 3 pF re CB E f = 1MHz * Pulse Test: PW≤350μs, Duty Cycle≤2% h Classificntion FE Classification R O Y G h 40 ~ 80 60 ~ 120 100 ~ 200 160 ~ 250 FE ©2000 Fairchild Semiconductor International Rev. A, February 2000
