KSC2334-Y ,NPN Epitaxial Silicon TransistorKSC2334KSC2334High Speed Switching Industrial Use• Complement to KSA1010TO-2201NPN Epitaxial Silico ..
KSC2334-Y ,NPN Epitaxial Silicon TransistorKSC2334KSC2334High Speed Switching Industrial Use• Complement to KSA1010TO-2201NPN Epitaxial Silico ..
KSC2334YTU ,NPN Epitaxial Silicon TransistorKSC2334KSC2334High Speed Switching Industrial Use• Complement to KSA1010TO-2201NPN Epitaxial Silico ..
KSC2335 ,NPN Epitaxial Silicon TransistorKSC2335KSC2335High Speed, High Voltage Switching• Industrial UseTO-2201NPN Epitaxial Silicon Transi ..
KSC2335-R ,NPN Epitaxial Silicon TransistorKSC2335KSC2335High Speed, High Voltage Switching• Industrial UseTO-2201NPN Epitaxial Silicon Transi ..
KSC2335-Y ,NPN Epitaxial Silicon TransistorKSC2335KSC2335High Speed, High Voltage Switching• Industrial UseTO-2201NPN Epitaxial Silicon Transi ..
L9012PLT1 , General Purpose Transistors PNP Silicon
L9012QLT1 , General Purpose Transistors PNP Silicon
L9012QLT1 , General Purpose Transistors PNP Silicon
L9013QLT1 , General Purpose Transistors NPN Silicon
L9013QLT1G , General Purpose Transistors NPN Silicon
L9013QLT1G , General Purpose Transistors NPN Silicon
KSC2334-Y-KSC2334YTU
NPN Epitaxial Silicon Transistor
KSC2334 KSC2334 High Speed Switching Industrial Use • Complement to KSA1010 TO-220 1 NPN Epitaxial Silicon Transistor 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings T =25°C unless otherwise noted C Symbol Parameter Value Units V Collector-Base Voltage 150 V CBO V Collector-Emitter Voltage 100 V CEO V Emitter-Base Voltage 7 V EBO I Collector Current (DC) 7 A C I *Collector Current (Pulse) 15 A CP I Base Current (DC) 3.5 A B P Collector Dissipation (T =25°C) 40 W C C Collector Dissipation (T =25°C) 1.5 W A T Junction Temperature 150 °C J T Storage Temperature - 55 ~ 150 °C STG * PW≤300μs, Duty Cycle≤10% Electrical Characteristics TC=25°C unless otherwise noted Symbol Parameter Test Condition Min. Max. Units V (sus) Collector-Emitter Sustaining Voltage I = 5A, I = 0.5A, L = 1mH 100 V CEO C B1 V (sus)1 Collector-Emitter Sustaining Voltage I = 5A, I = -I = 0.5A 100 V CEX C B1 B2 V (off) = -5V, L = 180μH, Clamped BE 100 V V (sus)2 Collector-Emitter Sustaining Voltage I = 10A, I =1A, I = -0.5A, CEX C B1 B2 V (off) = -5V, L = 180μH, Clamped BE I Collector Cut-off Current V = 100, I = 0 10 μA CBO CB E I Collector Cut-off Current V = 100V, R = 51Ω@T =125°C 1 mA CER CE BE C I Collector Cut-off Current V = 100V, V (off) = -1.5V 10 μA CEX1 CE BE I V = 100V, V (off) = -1.5V 1 mA CEX2 CE BE @ T = 125°C C I Emitter Cut-off Current V = 5V, I = 0 10 μA EBO EB C 40 h * DC Current Gain V = 5V, I = 0.5A FE1 CE C h V = 5V, I = 3A 40 240 FE2 CE C h V = 5V, I = 5A 20 FE3 CE C V (sat) * Collector-Emitter Saturation Voltage I = 5A, I = 0.5A 0.6 V CE C B V (sat) * Base-Emitter Saturation Voltage I = 5A, I = 0.5A 1.5 V BE C B t Turn On Time V = 50V, I = 5A 0.5 μs ON CC C I = -I = 0.5A t Storage Time B1 B2 0.5 μs STG R = 10Ω L t Fall Time 1.5 μs F * Pulse Test: PW≤350μs, Duty Cycle≤2%Pulsed h Classification FE Classification R O Y h 40 ~ 80 70 ~ 140 120 ~ 240 FE2 ©2001 Rev. A1, August 2001
