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KSC2331SAMSUNGN/a500avaiNPN Epitaxial Silicon Transistor
KSC2331N/a90avaiNPN Epitaxial Silicon Transistor
KSC2331YTAFAIRCHILDN/a700avaiNPN Epitaxial Silicon Transistor
KSC2331-YTA |KSC2331YTAFSCN/a3000avaiNPN Epitaxial Silicon Transistor


KSC2331-YTA ,NPN Epitaxial Silicon TransistorKSC2331KSC2331Low Frequency Amplifier & Medium Speed Switching• Complement to KSA931• High Collecto ..
KSC2334-Y ,NPN Epitaxial Silicon TransistorKSC2334KSC2334High Speed Switching Industrial Use• Complement to KSA1010TO-2201NPN Epitaxial Silico ..
KSC2334-Y ,NPN Epitaxial Silicon TransistorKSC2334KSC2334High Speed Switching Industrial Use• Complement to KSA1010TO-2201NPN Epitaxial Silico ..
KSC2334YTU ,NPN Epitaxial Silicon TransistorKSC2334KSC2334High Speed Switching Industrial Use• Complement to KSA1010TO-2201NPN Epitaxial Silico ..
KSC2335 ,NPN Epitaxial Silicon TransistorKSC2335KSC2335High Speed, High Voltage Switching• Industrial UseTO-2201NPN Epitaxial Silicon Transi ..
KSC2335-R ,NPN Epitaxial Silicon TransistorKSC2335KSC2335High Speed, High Voltage Switching• Industrial UseTO-2201NPN Epitaxial Silicon Transi ..
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L9013QLT1G , General Purpose Transistors NPN Silicon


KSC2331-KSC2331YTA-KSC2331-YTA
NPN Epitaxial Silicon Transistor
KSC2331 KSC2331 Low Frequency Amplifier & Medium Speed Switching • Complement to KSA931 • High Collector-Base Voltage : V =80V CBO • Collector Current : I =700mA C • Collector Dissipation : P =1W C TO-92L 1 1. Emitter 2. Collector 3. Base NPN Epitaxial Silicon Transistor Absolute Maximum Ratings T =25°C unless otherwise noted a Symbol Parameter Ratings Units V Collector-Base Voltage 80 V CBO V Collector-Emitter Voltage 60 V CEO V Emitter-Base Voltage 8 V EBO I Collector Current 700 mA C P Collector Power Dissipation 1 W C T Junction Temperature 150 °C J T Storage Temperature -55 ~ 150 °C STG Electrical Characteristics T =25°C unless otherwise noted a Symbol Parameter Test Condition Min. Typ. Max. Units BV Collector-Base Breakdown Voltage I =100μA, I =0 80 V CBO C E BV Collector-Emitter Breakdown Voltage I =10mA, I =0 60 V CEO C B BV Emitter-Base Breakdown Voltage I =10μA, I=0 8 V EBO E C I Collector Cut-off Current V =60V, I=0 0.1 μA CBO CB E I Emitter Cut-off Current V =5V, I =0 0.1 μA EBO EB C h DC Current Gain V =2V, I =50mA 40 240 FE CE C V (sat) Collector-Emitter Saturation Voltage I =500mA, I=50mA 0.20.7V CE C B V (sat) Base-Emitter Saturation Voltage I =500mA, I=50mA 0.861.20V BE C B f Current Gain Bandwidth Product V =10V, I =50mA 30 50 MHz T CE C C Output Capacitance V =10V, I =0, f=1MHz 8 pF ob CB E h Classification FE Classification R O Y h 40 ~ 80 70 ~ 140 120 ~ 240 FE ©2002 Rev. A2, September 2002
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