KSC2328AYTA ,NPN Epitaxial Silicon TransistorApplications• Complement to KSA928A• Collector Power Dissipation : P =1WC• 3 Watt Output Applicatio ..
KSC2328A-YTA ,NPN Epitaxial Silicon TransistorKSC2328AKSC2328AAudio Power Amplifier
KSC2331 ,NPN Epitaxial Silicon TransistorKSC2331KSC2331Low Frequency Amplifier & Medium Speed Switching• Complement to KSA931• High Collecto ..
KSC2331 ,NPN Epitaxial Silicon TransistorKSC2331KSC2331Low Frequency Amplifier & Medium Speed Switching• Complement to KSA931• High Collecto ..
KSC2331YTA ,NPN Epitaxial Silicon TransistorKSC2331KSC2331Low Frequency Amplifier & Medium Speed Switching• Complement to KSA931• High Collecto ..
KSC2331-YTA ,NPN Epitaxial Silicon TransistorKSC2331KSC2331Low Frequency Amplifier & Medium Speed Switching• Complement to KSA931• High Collecto ..
L8C201PC25 , 512/1K/2K/4K x 9-bit Asynchronous FIFO
L9012PLT1 , General Purpose Transistors PNP Silicon
L9012QLT1 , General Purpose Transistors PNP Silicon
L9012QLT1 , General Purpose Transistors PNP Silicon
L9013QLT1 , General Purpose Transistors NPN Silicon
L9013QLT1G , General Purpose Transistors NPN Silicon
KSC2328AOBU-KSC2328AYTA-KSC2328A-YTA
NPN Epitaxial Silicon Transistor
KSC2328A KSC2328A Audio Power Amplifier Applications • Complement to KSA928A • Collector Power Dissipation : P =1W C • 3 Watt Output Application TO-92L 1 1. Emitter 2. Collector 3. Base NPN Epitaxial Silicon Transistor Absolute Maximum Ratings T =25°C unless otherwise noted a Symbol Parameter Ratings Units V Collector-Base Voltage 30 V CBO V Collector-Emitter Voltage 30 V CEO V Emitter-Base Voltage 5 V EBO I Collector Current 2 A C P Collector Power Dissipation 1 W C T Junction Temperature 150 °C J T Storage Temperature -55 ~ 150 °C STG Electrical Characteristics T =25°C unless otherwise noted a Symbol Parameter Test Condition Min. Typ. Max. Units BV Collector-Base Breakdown Voltage I =100μA, I =0 30 V CBO C E BV Collector-Emitter Breakdown Voltage I =10mA, I =0 30 V CEO C B BV Emitter-Base Breakdown Voltage I =1mA, I=0 5 V EBO E C I Collector Cut-off Current V =30V, I=0 100nA CBO CB E I Emitter Cut-off Current V =5V, I =0 100 nA EBO EB C h DC Current Gain V =2V, I =500mA 100 320 FE CE C V (on) Base-Emitter On Voltage V =2V, I =500mA 1.0 V BE CE C V (sat) Collector-Emitter Saturation Voltage I =1.5A, I=0.03A 2.0V CE C B f Current Gain Bandwidth Product V =2V, I =500mA 120 MHz T CE C C Collector Output Capacitance V =10V,I =0, f=1MHz 30 pF ob CB E h Classification FE Classification O Y h 100 ~ 200 160 ~ 320 FE ©2002 Rev. A2, September 2002
