KSC2223OMTF ,NPN Epitaxial Silicon Transistorapplications3•f =600MHz (TYP) at I =1mAT C•C=1pF (TYP) at V =6Vob CB• NF=3dB (TYP) at f=100MHz21SOT ..
KSC2223YMTF ,NPN Epitaxial Silicon TransistorKSC2223KSC2223High Frequency Amplifier• Very small size to assure good space factor in Hybrid IC
KSC2223-Y-MTF ,NPN Epitaxial Silicon TransistorKSC2223KSC2223High Frequency Amplifier• Very small size to assure good space factor in Hybrid IC
KSC2233 ,200 V, 4 A, NPN epitaxial silicon transistor
KSC2233 ,200 V, 4 A, NPN epitaxial silicon transistor
KSC2258A ,NPN Epitaxial Silicon TransistorKSC2258/2258AKSC2258/2258AHigh Voltage General Amplifier TV Video Output Amplifier High BVCEOTO-12 ..
L8C201PC25 , 512/1K/2K/4K x 9-bit Asynchronous FIFO
L9012PLT1 , General Purpose Transistors PNP Silicon
L9012QLT1 , General Purpose Transistors PNP Silicon
L9012QLT1 , General Purpose Transistors PNP Silicon
L9013QLT1 , General Purpose Transistors NPN Silicon
L9013QLT1G , General Purpose Transistors NPN Silicon
KSC2223OMTF-KSC2223YMTF-KSC2223-Y-MTF
NPN Epitaxial Silicon Transistor
KSC2223 KSC2223 High Frequency Amplifier • Very small size to assure good space factor in Hybrid IC applications 3 •f =600MHz (TYP) at I =1mA T C •C =1pF (TYP) at V =6V ob CB • NF=3dB (TYP) at f=100MHz 2 1 SOT-23 1. Base 2. Emitter 3. Collector NPN Epitaxial Silicon Transistor Absolute Maximum Ratings T =25°C unless otherwise noted a Symbol Parameter Value Units V Collector-Base Voltage 30 V CBO V Collector-Emitter Voltage 20 V CEO V Emitter-Base Voltage 4 V EBO I Collector Current 20 mA C P Collector Power Dissipation 150 mW C T Junction Temperature 150 °C J T Storage Temperature -55 ~ 150 °C STG Electrical Characteristics T =25°C unless otherwise noted a Symbol Parameter Test Condition Min. Typ. Max. Units I Collector Cut-off Current V 30V, I =0 0.1 μA CBO CB= E h DC Current Gain V =6V, I =1mA 40 90 180 FE CE C V (sat) Collector Emitter Saturation Voltage I =10mA, I=1mA 0.10.3V CE C B C Output Capacitance V =6V, I =0, f=1MHz 1 pF ob CB E f Current Gain Bandwidth Product V =6V, I =1mA 400 600 MHz T CE C C Time Constant V =6V, I =1mA 12 ps c·rbb CB C f=31.9MHz NF Noise Figure V =6V, I =1mA 3dB CE C f=100MHz, R =50Ω S h Classification FE Classification R O Y h 40 ~ 80 60 ~ 120 90 ~ 180 FE Marking H5O h grade FE ©2002 Rev. A3, September 2002
