KSC1730-YTA ,NPN Epitaxial Silicon TransistorKSC1730KSC1730TV VHF, UHF Tuner Oscillator• High Current Gain Bandwidth Product : f =1100MHzT• Outp ..
KSC1845 ,NPN (AUDIO FREQUENCY LOW NOISE AMPLIFIER)KSC1845KSC1845Audio Frequency Low Noise Amplifier• Complement to KSA992TO-9211. Emitter 2. Collec ..
KSC2001GTA ,NPN Epitaxial Silicon TransistorApplications• High h and Low V (sat)FE CE TO-9211. Emitter 2. Collector 3. BaseNPN Epitaxial Si ..
KSC2001GTA ,NPN Epitaxial Silicon TransistorKSC2001KSC2001General Purpose
KSC2073H2TU ,NPN Epitaxial Silicon TransistorKSC2073KSC2073TV Vertical Deflection Output Complement to KSA940 Collector-Base Voltage : V = 150 ..
KSC2073TU ,NPN Epitaxial Silicon TransistorKSC2073KSC2073TV Vertical Deflection Output Complement to KSA940 Collector-Base Voltage : V = 150 ..
L88MS09T ,4 to 12 V, 0.5 A Low Dropout Voltage Regulator with On/Off FunctionOperating Characteristics at Tj = 25°C, V =8V,I = 500 mA, C = 100μF, C ,Cn=1μF,IN O OUT INsee speci ..
L88MS12T ,4 to 12 V, 0.5 A Low Dropout Voltage Regulator with On/Off FunctionOperating Characteristics at Tj = 25°C, V =9V,I = 500 mA, C = 100μF, C ,Cn=1μF,IN O OUT INsee speci ..
L88MS33T ,3.3 V, 0.5 A Low Dropout Voltage Regulator with On/Off FunctionPin Assignmentpackage..Surface mounting on board permits allowable powerdissipation to be raised..E ..
L88R05D ,5V, 1A Voltage-regulator ICs with Reset FunctionOperating Characteristics at Tj = 25 "C, VIN = 8 V, Iour = 1 A, COUT = 47 pA for specified circuits ..
L8C201PC25 , 512/1K/2K/4K x 9-bit Asynchronous FIFO
L9012PLT1 , General Purpose Transistors PNP Silicon
KSC1730-YTA
NPN Epitaxial Silicon Transistor
KSC1730 KSC1730 TV VHF, UHF Tuner Oscillator • High Current Gain Bandwidth Product : f =1100MHz T • Output Capacitance : C =1.5pF (MAX.) OB TO-92 1 1. Emitter 2. Collector 3. Base NPN Epitaxial Silicon Transistor Absolute Maximum Ratings T =25°C unless otherwise noted a Symbol Parameter Value Units V Collector-Base Voltage 30 V CBO V Collector-Emitter Voltage 15 V CEO V Emitter-Base Voltage 5 V EBO I Collector Current 50 mA C P Collector Power Dissipation 250 mW C T Junction Temperature 150 °C J T Storage Temperature -55 ~ 150 °C STG Electrical Characteristics T =25°C unless otherwise noted a Symbol Parameter Test Condition Min. Typ. Max. Units BV Collector-Base Breakdown Voltage I =10μA, I =0 30 V CBO C E BV Collector-Emitter Breakdown Voltage I =5mA, I =0 15 V CEO C B BV Emitter-Base Breakdown Voltage I =10μA, I =0 5 V EBO E C I Collector Cut-off Current V =12V, I =0 0.1 μA CBO CB E h DC Current Gain V =10V, I =5mA 40 240 FE CE C V (sat) Collector-Emitter Saturation Voltage I =10mA, I=1mA 0.5V CE C B f Current Gain Bandwidth Product V =10V, I =5mA 800 1100 MHz T CE C C Output Capacitance V =10V, I =0, f=1MHz 1.5 pF ob CB E C Collector-Base Time Constant V =10V, I =5mA 10 20 ps c·rbb’ CE E f=31.9MHz h Classification FE Classification R O Y h 40 ~ 80 70 ~ 140 120 ~ 240 FE ©2002 Rev. B1, September 2002
