KSB744 ,PNP Epitaxial Silicon TransistorKSB744/744AKSB744/744AAudio Frequency Power Amplifier Complement to KSD794/KSD794ATO-12611. Emitte ..
KSB772OS ,PNP Epitaxial Silicon TransistorKSB772KSB772Audio Frequency Power Amplifier • Low Speed Switching• Complement to KSD882TO-12611. Em ..
KSB772OS ,PNP Epitaxial Silicon TransistorKSB772KSB772Audio Frequency Power Amplifier • Low Speed Switching• Complement to KSD882TO-12611. Em ..
KSB772-Y , Audio Frequency Power Amplifier
KSB772-Y , Audio Frequency Power Amplifier
KSB772-Y , Audio Frequency Power Amplifier
L8550HRLT1G , General Purpose Transistors PNP Silicon Epitaxial planar type.
L8550QLT1 , General Purpose Transistors PNP Silicon
L8550QLT1 , General Purpose Transistors PNP Silicon
L88M09T ,Voltage Regulators: 9V low-saturation voltage regulatorFeatures.Output voltage L88M33T: 3.3 V L88M05T: 5 VL88M09T: 9 V L88M12T: 12 V.500 mAoutput current. ..
L88M33T ,Voltage Regulators: 3.3V low-saturation voltage regulatorOperating Characteristics at Tj = 25°C, V =8V,I = 500 mA, C = 100μF, C = 1μF,IN O OUT INsee specifi ..
L88MS05T ,4 to 12 V, 0.5 A Low Dropout Voltage Regulator with On/Off FunctionOperating Characteristics at Tj = 25°C, V =7V,I = 500 mA, C = 100μF, C ,Cn=1μF,IN O OUT INsee speci ..
KSB744
PNP Epitaxial Silicon Transistor
KSB744/744A KSB744/744A Audio Frequency Power Amplifier Complement to KSD794/KSD794A TO-126 1 1. Emitter 2.Collector 3.Base PNP Epitaxial Silicon Transistor Absolute Maximum Ratings T =25°C unless otherwise noted C Symbol Parameter Value Units V Collector-Base Voltage -70 V CBO V Collector-Emitter Voltage : KSB744 -45 V CEO : KSB744A -60 V V Emitter-Base Voltage -5 V EBO I Collector Current (DC) -3 A C I *Collector Current (Pulse) -5 A CP I Base Current -0.6 A B P Collector Dissipation (T =25°C) 1 W C a P Collector Dissipation (T =25°C) 10 W C C TJ Junction Temperature 150 °C T Storage Temperature -55 ~ 150 °C STG * PW≤10ms, Duty Cycle≤50% Electrical Characteristics T =25°C unless otherwise noted C Symbol Parameter Test Condition Min. Typ. Max. Units I Collector Cut-off Current V = -45V, I = 0 -1 μA CBO CB E I Emitter Cut-off Current V = -3V, I = 0 -1 μA EBO EB C h * DC Current Gain V = -5V, I = -20mA 30 120 FE1 CE C h V = -5V, I = -0.5A 60 100 320 FE2 CE C V (sat) * Collector-Emitter Saturation Voltage I = -1.5A, I = -0.15A -0.5 -2 V CE C C V (sat) * Base-Emitter Saturation Voltage I = -1.5A, I = -0.15A -0.8 -2 V BE C B f Current Gain Bandwidth Product V = -5V, I = -0.1A 45 MHz T CE C C Output Capacitance V = -10V, I = 0 60 pF ob CB E f = 1MHz * Pulse Test: PW≤350μs, Duty Cycle≤2% Pulsed h Cassification FE Classification R O Y h 60 ~ 120 100 ~ 200 160 ~ 320 FE2 ©2000 Fairchild Semiconductor International Rev. A, February 2000
