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KSB1366YTUFAIRCHILDN/a3000avaiPNP Epitaxial Silicon Transistor


KSB1366YTU ,PNP Epitaxial Silicon TransistorKSB1366KSB1366LOW FREQUENCY POWER AMPLIFIER Complement to KSD2012TO-220F11.Base 2.Collector ..
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KSB564AC-YTA ,PNP Epitaxial Silicon TransistorKSB564AKSB564AAudio Frequency Power Amplifier • Complement to KSD471A• Collector Current : I = -1AC ..
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L88M09T ,Voltage Regulators: 9V low-saturation voltage regulatorFeatures.Output voltage L88M33T: 3.3 V L88M05T: 5 VL88M09T: 9 V L88M12T: 12 V.500 mAoutput current. ..
L88M33T ,Voltage Regulators: 3.3V low-saturation voltage regulatorOperating Characteristics at Tj = 25°C, V =8V,I = 500 mA, C = 100μF, C = 1μF,IN O OUT INsee specifi ..


KSB1366YTU
PNP Epitaxial Silicon Transistor
KSB1366 KSB1366 LOW FREQUENCY POWER AMPLIFIER  Complement to KSD2012 TO-220F 1 1.Base 2.Collector 3.Emitter PNP Epitaxial Silicon Transistor Absolute Maximum Ratings T =25°C unless otherwise noted C Symbol Parameter Value Units V Collector-Base Voltage - 60 V CBO V Collector-Emitter Voltage - 60 V CEO V Emitter-Base Voltage - 7 V EBO I Collector Current(DC) - 3 A C I Base Current - 0.5 A B P Collector Dissipation (T =25°C) 2 W C a P Collector Dissipation (T =25°C) 25 W C C T Junction Temperature 150 °C J T Storage Temperature - 55 ~ 150 °C STG Electrical Characteristics T =25°C unless otherwise noted C Symbol Parameter Test Condition Min. Typ. Max. Units BV Collector-Emitter Breakdown Voltage I = - 50mA, I = 0 - 60 V CEO C B I Collector Cut-off Current V = - 60V, I = 0 - 100 μA CBO CB E I Emitter Cut-off Current V = - 7V, I = 0 - 100 μA EBO EB C h DC Current Gain V = - 5V, I = - 0.5A 100 320 FE1 CE C h V = - 5V, I = - 3A 20 FE2 CE C V (sat) Collector-Emitter Saturation Voltage I = - 2A, I = - 0.2A - 0.5 - 1 V CE C B V (on) Base-Emitter ON Voltage V = - 5V, I = - 0.5A - 0.7 - 1 V BE CE C f Current Gain Bandwidth Product V = - 5V, I = - 0.5A 9 MHz T CE C h Classification FE Classification Y G h 100 ~ 200 150 ~ 320 FE1 ©2000 Fairchild Semiconductor International Rev. A, February 2000
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