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KSB1151YSFAIRCHILDN/a30000avaiPNP Epitaxial Silicon Transistor
KSB1151YSTU仙童N/a19740avaiPNP Epitaxial Silicon Transistor


KSB1151YS ,PNP Epitaxial Silicon TransistorKSB1151KSB1151Feature Low Collector-Emitter Saturation Voltage Large Collector Current High Powe ..
KSB1151YSTU ,PNP Epitaxial Silicon TransistorKSB1151KSB1151Feature Low Collector-Emitter Saturation Voltage Large Collector Current High Powe ..
KSB1366YTU ,PNP Epitaxial Silicon TransistorKSB1366KSB1366LOW FREQUENCY POWER AMPLIFIER Complement to KSD2012TO-220F11.Base 2.Collector ..
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L8550QLT1 , General Purpose Transistors PNP Silicon
L8550QLT1 , General Purpose Transistors PNP Silicon
L88M09T ,Voltage Regulators: 9V low-saturation voltage regulatorFeatures.Output voltage L88M33T: 3.3 V L88M05T: 5 VL88M09T: 9 V L88M12T: 12 V.500 mAoutput current. ..
L88M33T ,Voltage Regulators: 3.3V low-saturation voltage regulatorOperating Characteristics at Tj = 25°C, V =8V,I = 500 mA, C = 100μF, C = 1μF,IN O OUT INsee specifi ..


KSB1151YS-KSB1151YSTU
PNP Epitaxial Silicon Transistor
KSB1151 KSB1151 Feature  Low Collector-Emitter Saturation Voltage  Large Collector Current  High Power Dissipation : P =1.3W (T =25°C) C a  Complement to KSD 1691 TO-126 1 1. Emitter 2.Collector 3.Base PNP Epitaxial Silicon Transistor Absolute Maximum Ratings T =25°C unless otherwise noted C Symbol Parameter Value Units V Collector-Base Voltage - 60 V CBO V Collector-Emitter Voltage - 60 V CEO V Emitter-Base Voltage - 7 V EBO I Collector Current (DC) - 5 A C I *Collector Current (Pulse) - 8 A CP I Base Current - 1 A B P Collector Dissipation (T =25°C) 1.3 W C a Collector Dissipation (T =25°C) 20 W C T Junction Temperature 150 °C J T Storage Temperature - 55 ~ 150 °C STG * PW≤10ms, Duty Cycle≤50% Electrical Characteristics T =25°C unless otherwise noted C Symbol Parameter Test Condition Min. Typ. Max. Units I Collector Cut-off Current V = - 50V, I = 0 - 10 μA CBO CB E I Emitter Cut-off Current V = - 7V, I = 0 - 10 μA EBO EB C h * DC Current Gain V = - 1V, I = - 0.1A 60 FE1 CE C 100 200 400 h V = - 1V, I = - 2A FE2 CE C h V = - 2V, I = - 5A 50 FE3 CE C V (sat) * Collector-Emitter Saturation Voltage I = - 2A, I = - 0.2A - 0.14 - 0.3 V CE C B V (sat) * Base-Emitter Saturation Voltage I = - 2A, I = - 0.2A - 0.9 - 1.2 V BE C B t Turn On Time V = - 10V, I = - 2A 0.15 1 μs ON CC C I = - I =0.2A t Storage Time B1 B2 0.78 2.5 μs STG RL = 5Ω t Fall Time 0.18 1 μs F * Pulse test: PW≤350μs, Duty Cycle≤2% Pulsed h Classification FE Classification O Y G h 100 ~ 200 160 ~ 320 200 ~ 400 FE2 ©2003 Rev. B, May 2003
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