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KSA940-H2 |KSA940H2SECN/a50avaiPNP Epitaxial Silicon Transistor
KSA940TUFAIRCHILDN/a2436avaiPNP Epitaxial Silicon Transistor
KSA940TUFSCN/a3950avaiPNP Epitaxial Silicon Transistor


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KSA940-H2-KSA940TU
PNP Epitaxial Silicon Transistor
KSA940 KSA940 Vertical Deflection Output Power Amplifier  Complement to KSC2073 TO-220 1 1.Base 2.Collector 3.Emitter PNP Epitaxial Silicon Transistor Absolute Maximum Ratings T =25°C unless otherwise noted C Symbol Parameter Ratings Units V Collector-Base Voltage - 150 V CBO V Collector-Emitter Voltage - 150 V CEO V Emitter-Base Voltage - 5 V EBO I Collector Current - 1.5 A C I Base Current - 0.5 A B P Collector Dissipation (T =25°C) 1.5 W C a P Collector Dissipation (T =25°C) 25 W C C T Junction Temperature 150 °C J T Storage Temperature - 55 ~ 150 °C STG Electrical Characteristics T =25°C unless otherwise noted C Symbol Parameter Test Condition Min. Typ. Max. Units I Collector Cut-off Current V = - 120V, I = 0 - 10 μA CBO CB E I Emitter Cut-off Current V = - 5V, I = 0 - 10 μA EBO EB C h DC Current Gain V = - 10V, I = - 500mA 40 75 140 FE CE C V (sat) Collector-Emitter Saturation Voltage I = - 500mA, I = - 50mA - 1.5 V CE C B V (on) Base-Emitter ON Voltage V = - 10V, I = - 500mA - 0.65 - 0.75 - 0.85 V BE CE C f Current Gain Bandwidth Product V = - 10V, I = - 500mA 4 MHz T CE C C Output Capacitance V = - 10V, I = 0 55 pF ob CB E f = 1MHz ©2000 Fairchild Semiconductor International Rev. A, February 2000
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