KSA812GMTF ,PNP Epitaxial Silicon TransistorKSA812KSA812Low Frequency Amplifier• Collector-Base Voltage : V = -60VCBO3• Complement to KSC16232S ..
KSA812-G-MTF ,PNP Epitaxial Silicon TransistorKSA812KSA812Low Frequency Amplifier• Collector-Base Voltage : V = -60VCBO3• Complement to KSC16232S ..
KSA812-G-MTF ,PNP Epitaxial Silicon TransistorKSA812KSA812Low Frequency Amplifier• Collector-Base Voltage : V = -60VCBO3• Complement to KSC16232S ..
KSA812YMTF ,PNP Epitaxial Silicon TransistorKSA812KSA812Low Frequency Amplifier• Collector-Base Voltage : V = -60VCBO3• Complement to KSC16232S ..
KSA812-Y-MTF ,PNP Epitaxial Silicon TransistorKSA812KSA812Low Frequency Amplifier• Collector-Base Voltage : V = -60VCBO3• Complement to KSC16232S ..
KSA910-YTA ,PNP Epitaxial Silicon TransistorApplications• Collector-Emitter Voltage : V = -150VCEO• Output Capacitance : C =5pF (MAX.)ob• Compl ..
L8045 , Red LED for optical link
L8050HRLT1G , General Purpose Transistors NPN Silicon Epitaxial planar type.
L8050PLT1G , General Purpose Transistors NPN Silicon Epitaxial planar type.
L8050QLT1 , General Purpose Transistors NPN Silicon
L8050QLT1 , General Purpose Transistors NPN Silicon
L80N4LLF3 , N-channel 40V - 0.0042ohm - 80A - PowerFLAT (6x5) STripFET Power MOSFET for DC-DC conversion
KSA812GMTF-KSA812-G-MTF-KSA812YMTF-KSA812-Y-MTF
PNP Epitaxial Silicon Transistor
KSA812 KSA812 Low Frequency Amplifier • Collector-Base Voltage : V = -60V CBO 3 • Complement to KSC1623 2 SOT-23 1 1. Base 2. Emitter 3. Collector PNP Epitaxial Silicon Transistor Absolute Maximum Ratings T =25°C unless otherwise noted a Symbol Parameter Ratings Units V Collector-Base Voltage -60 V CBO V Collector-Emitter Voltage -50 V CEO V Emitter-Base Voltage -5 V EBO I Collector Current -100 mA C P Collector Power Dissipation 150 mW C T Junction Temperature 150 °C J T Storage Temperature -55 ~ 150 °C STG Electrical Characteristics T =25°C unless otherwise noted a Symbol Parameter Test Condition Min. Typ. Max. Units I Collector Cut-off Current V = -60V, I =0 -0.1 μA CBO CB E I Emitter Cut-off Current V = -5V, I =0 -0.1 μA EBO EB C h DC Current Gain V = -6V, I = -1mA 90 200 600 FE CE C V (sat) Collector-Emitter Saturation Voltage I = -100mA, I = -10mA -0.18 -0.3 V CE C B V (on) Base-Emitter On Voltage V = -6V, I = -1mA -0.55 -0.62 -0.65 V BE CE C f Current Gain Bandwidth Product V = -6V, I = -10mA 180 MHz T CE C C Output Capacitance V = -10V, I =0, f=1MHz 4.5 pF ob CB E h Classification FE Classification O Y G L h 90 ~ 180 135 ~ 270 200 ~ 400 300 ~ 600 FE Marking D1O h grade FE ©2001 Rev. A1, June 2001
