KSA643 ,PNP Epitaxial Silicon TransistorKSA643KSA643Low Frequency Power Amplifier• Collector Power Dissipation: P =500mWC• Complement to KS ..
KSA708 ,PNP Epitaxial Silicon TransistorKSA708KSA708Low Frequency Amplifier & Medium Speed Switching• Complement to KSC1008• Collector-Base ..
KSA708YBU ,PNP Epitaxial Silicon TransistorKSA708KSA708Low Frequency Amplifier & Medium Speed Switching• Complement to KSC1008• Collector-Base ..
KSA709GTA ,PNP Epitaxial Silicon TransistorKSA709KSA709High Voltage Amplifier• Collector-Base Voltage : V = -160VCBO• Collector Power Dissipat ..
KSA709GTA ,PNP Epitaxial Silicon TransistorKSA709KSA709High Voltage Amplifier• Collector-Base Voltage : V = -160VCBO• Collector Power Dissipat ..
KSA733 ,PNP Epitaxial Silicon TransistorKSA733KSA733Low Frequency Amplifier• Collector-Base Voltage : V = -60VCBO• Complement to KSC945• Su ..
L800BB90VC , 8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory
L800BB90VI , 8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory
L800BT70VC , 8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory
L800BT90VI , 8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory
L80227 , 10BASE-T/ 100BASE-TX Ethernet PHY
L8045 , Red LED for optical link
KSA643
PNP Epitaxial Silicon Transistor
KSA643 KSA643 Low Frequency Power Amplifier • Collector Power Dissipation: P =500mW C • Complement to KSD261 • Suffix “-C” means Center Collector (1. Emitter 2. Collector 3. Base) TO-92 1 1. Emitter 2. Base 3. Collector PNP Epitaxial Silicon Transistor Absolute Maximum Ratings T =25°C unless otherwise noted a Symbol Parameter Ratings Units V Collector-Base Voltage -40 V CBO V Collector-Emitter Voltage -20 V CEO V Emitter-Base Voltage -5 V EBO I Collector Current (DC) -500 mA C I * Collector Current (pulse) -700 mA CP P Collector Power Dissipation 500 mW C T Junction Temperature 150 °C J T Storage Temperature -55 ~ 150 °C STG * PW≤10ms, Duty cycle≤50% Electrical Characteristics T =25°C unless otherwise noted a Symbol Parameter Test Condition Min. Typ. Max. Units BV Collector-Base Breakdown Voltage I = -100μA, I =0 -40 V CBO C E BV Collector-Emitter Breakdown Voltage I = -10mA, I =0 -20 V CEO C B BV Emitter-Base Breakdown Voltage I = -10μA, I =0 -5 V EBO E C I Collector Cut-off Current V = -25V, I =0 -200 nA CBO CB E I Emitter Cut-off Current V = -3V, l =0 -200 nA EBO EB C h * DC Current Gain V = -1V, I = -100mA 40 400 FE CE C V (sat) * Collector-Emitter Saturation Voltage I = -500mA, I = -50mA -0.3 - 0.4 V CE C B V (sat) * Base-Emitter Saturation Voltage I = -500mA, I = -50mA -1.0 -1.3 V BE C B * Pulse Test: PW≤350μs, Duty cycle≤2% h Classification FE Classification R O Y G h 40 ~ 80 70 ~ 140 120 ~ 240 200 ~ 400 FE ©2001 Rev. A1, June 2001
