KSA614YTU ,PNP Epitaxial Silicon TransistorKSA614KSA614Low Frequency Power AmplifierPower Regulator Collector-Base Voltage : V = -80VCBO Col ..
KSA614YTU ,PNP Epitaxial Silicon TransistorKSA614KSA614Low Frequency Power AmplifierPower Regulator Collector-Base Voltage : V = -80VCBO Col ..
KSA642 ,PNP Epitaxial Silicon TransistorKSA642KSA642Low Frequency Power Amplifier• Complement to KSD227• Collector Power Dissipation : P = ..
KSA642 ,PNP Epitaxial Silicon TransistorKSA642KSA642Low Frequency Power Amplifier• Complement to KSD227• Collector Power Dissipation : P = ..
KSA642GBU ,PNP Epitaxial Silicon TransistorKSA642KSA642Low Frequency Power Amplifier• Complement to KSD227• Collector Power Dissipation : P = ..
KSA643 ,PNP Epitaxial Silicon TransistorKSA643KSA643Low Frequency Power Amplifier• Collector Power Dissipation: P =500mWC• Complement to KS ..
L800BB12VC , 8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory
L800BB12VI , 8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory
L800BB70VI , 8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory
L800BB90VC , 8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory
L800BB90VI , 8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory
L800BT70VC , 8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory
KSA614-Y-KSA614YTU
PNP Epitaxial Silicon Transistor
KSA614 KSA614 Low Frequency Power Amplifier Power Regulator Collector-Base Voltage : V = -80V CBO Collector Dissipation : P =25W (T =25°C) C C TO-220 1 1.Base 2.Collector 3.Emitter PNP Epitaxial Silicon Transistor Absolute Maximum Ratings T =25°C unless otherwise noted C Symbol Parameter Ratings Units V Collector- Base Voltage - 80 V CBO V Collector- Emitter Voltage - 55 V CEO V Emitter- Base Voltage - 5 V EBO I Collector Current - 3 A C P Collector Dissipation (T =25°C) 25 W C C T Junction Temperature 150 °C J T Storage Temperature - 55 ~ 150 °C STG Electrical Characteristics T =25°C unless otherwise noted C Symbol Parameter Test Condition Min. Typ. Max. Units BV Collector-Base Breakdown Voltage I = - 500μA, I = 0 - 80 V CBO C E BV Collector-Emitter Breakdown Voltage I = - 10mA, I = 0 - 55 V CEO C B BV Emitter-Base Breakdown Voltage I = - 500μA, I = 0 - 5 V EBO E C I Collector Cut-off Current V = - 50V, I = 0 - 50 μA CBO CB E h DC Current Gain V = - 5V, I = - 0.5A 40 240 FE CE C V (sat) Collector-Emitter Saturation Voltage I = - 1A, I = - 0.1A - 0.15 - 0.5 V CE C B h Classification FE Classification R O Y h 40 ~ 80 70 ~ 140 120 ~ 240 FE ©2000 Fairchild Semiconductor International Rev. A, February 2000
