KSA1406CSTU ,PNP Epitaxial Silicon TransistorKSA1406KSA1406CRT Display, Video Output High Current Gain Bandwidth Product : f = 400MHz (Typ.)T ..
KSA473YTU ,PNP Epitaxial Silicon TransistorKSA473KSA473Low Frequency Power AmplifierPower Regulator Collector Current : I = -3AC Collector D ..
KSA539 ,PNP Epitaxial Silicon TransistorKSA539KSA539Low Frequency Amplifier• Complement to KSC815• Collector-Base Voltage: V = -60VCBO• Col ..
KSA539 ,PNP Epitaxial Silicon TransistorKSA539KSA539Low Frequency Amplifier• Complement to KSC815• Collector-Base Voltage: V = -60VCBO• Col ..
KSA539Y , Low Frequency Amplifier
KSA539-Y , Low Frequency Amplifier
L800BB12VC , 8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory
L800BB12VI , 8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory
L800BB70VI , 8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory
L800BB90VC , 8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory
L800BB90VI , 8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory
L800BT70VC , 8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory
KSA1406CSTU
PNP Epitaxial Silicon Transistor
KSA1406 KSA1406 CRT Display, Video Output High Current Gain Bandwidth Product : f = 400MHz (Typ.) T High Collector-Base Breakdown Voltage : V = -200V CBO Low Reverse Transfer Capacitance : C =1.7pF (Typ.) re TO-126 1 1. Emitter 2.Collector 3.Base PNP Epitaxial Silicon Transistor Absolute Maximum Ratings T =25°C unless otherwise noted C Symbol Parameter Ratings Units V Collector-Base Voltage - 200 V CBO V Collector-Emitter Voltage - 200 V CEO V Emitter-Base Voltage - 4 V EBO I Collector Current (DC) - 100 mA C I Collector Current (Pulse) - 200 mA CP P Collector Dissipation (T =25°C) 1.2 W C a P Collector Dissipation (T =25°C) 7 W C C T Junction Temperature 150 °C J T Storage Temperature - 55 ~ 150 °C STG Electrical Characteristics T =25°C unless otherwise noted C Symbol Parameter Test Condition Min. Typ. Max. Units BV Collector-Base Breakdown Voltage I = - 10μA, I = 0 - 200 V CBO C B BV Collector-Emitter Breakdown Voltage I = - 1mA, R =∞ - 200 V CEO C BE BV Emitter-Base Breakdown Voltage I = - 100μA, I = 0 - 4 V EBO E C I Collector Cut-off Current V = - 150V, I = 0 - 0.1 μA CBO CB C I Emitter Cut-off Current V = - 2V, I = 0 - 0.1 μA EBO BE E h DC Current Gain V = - 10V, I = - 10mA 40 120 FE1 CE C h V = - 10V, I = - 60mA 20 FE2 CE C V (Sat) Collector-Emitter Saturation Voltage I = - 30mA, I = - 3mA - 0.8 V CE C C V (Sat) Base-Emitter Saturation Voltage I = - 30mA, I = - 3mA - 1.8 V BE C C f Current Gain Bandwidth Product V = - 30V, I = - 30mA 400 MHz T CE C C Output Capacitance V = - 30V, f = 1MHz 2.3 pF ob CB C Reverse Transfer Capacitance V = - 30V, f = 1MHz 1.7 pF re CB * h Classification FE Classification C D h 40 ~ 80 60 ~ 120 FE1 ©2000 Fairchild Semiconductor International Rev. A, February 2000
