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KSA1381ES-KSA1381ESTU Fast Delivery,Good Price
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KSA1381ESFSCN/a1955avaiPNP Epitaxial Silicon Transistor
KSA1381ESTUFAIRCHILN/a1670avaiPNP Epitaxial Silicon Transistor


KSA1381ES ,PNP Epitaxial Silicon TransistorKSA1381KSA1381CRT Display, Video Output High Collector-Emitter Breakdown Voltage : V = -300VCEO L ..
KSA1381ESTU ,PNP Epitaxial Silicon TransistorKSA1381KSA1381CRT Display, Video Output High Collector-Emitter Breakdown Voltage : V = -300VCEO L ..
KSA1406CSTU ,PNP Epitaxial Silicon TransistorKSA1406KSA1406CRT Display, Video Output High Current Gain Bandwidth Product : f = 400MHz (Typ.)T ..
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KSA1381ES-KSA1381ESTU
PNP Epitaxial Silicon Transistor
KSA1381 KSA1381 CRT Display, Video Output  High Collector-Emitter Breakdown Voltage : V = -300V CEO  Low Reverse Transfer Capacitance : C = 2.3pF at V = -30V re CB TO-126 1 1. Emitter 2.Collector 3.Base PNP Epitaxial Silicon Transistor Absolute Maximum Ratings T =25°C unless otherwise noted C Symbol Parameter Ratings Units V Collector-Base Voltage - 300 V CBO V Collector-Emitter Voltage - 300 V CEO V Emitter-Base Voltage - 5 V EBO I Collector Current (DC) - 100 mA C I Collector Current (Pulse) - 200 mA CP P Collector Dissipation (T =25°C) 7 W C C P Collector Dissipation (T =25°C) 1.2 W C a T Junction Temperature 150 °C J T Storage Temperature - 55 ~ 150 °C STG Electrical Characteristics T =25°C unless otherwise noted C Symbol Parameter Test Condition Min. Typ. Max. Units BV Collector-Base Breakdown Voltage I = - 10μA, I = 0 - 300 V CBO C E BV Collector-Emitter Breakdown Voltage I = - 1mA, I = 0 - 300 V CEO C B BV Emitter-Base Breakdown Voltage I = - 10μA, I = 0 - 5 V EBO E C I Collector Cut-off Current V = - 200V, I = 0 - 0.1 μA CBO CB E I Emitter Cut-off Current V = - 4V, I = 0 - 0.1 μA EBO EB C h DC Current Gain V = - 10V, I = - 10mA 40 320 FE CE C V (sat) Collector-Emitter Saturation Voltage I = - 20mA, I = - 2mA - 0.6 V CE C B V (sat) Base-Emitter Saturation Voltage I = - 20mA, I = - 2mA - 1 V BE C B f Current Gain Bandwidth Product V = - 30V, I = - 10mA 150 MHz T CE C C Output Capacitance V = - 30V, f = 1MHz 3.1 pF ob CB C Reverse Transfer Capacitance V = - 30V, f = 1MHz 2.3 pF re CB h Classification FE Classification C D E F h 40 ~ 80 60 ~ 120 100 ~ 200 160 ~ 320 FE ©2000 Fairchild Semiconductor International Rev. A, February 2000
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