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KSA1156OS-KSA1156OSTU-KSA1156YS-KSA1156-Y-S Fast Delivery,Good Price
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Partno Mfg Dc Qty AvailableDescript
KSA1156OSFSCN/a6000avaiPNP Silicon Transistor
KSA1156OSTUFAIRCHILN/a3000avaiPNP Silicon Transistor
KSA1156YSFAIRCHILN/a20000avaiPNP Silicon Transistor
KSA1156YSFSCN/a36000avaiPNP Silicon Transistor
KSA1156-Y-S |KSA1156YS仙童N/a12338avaiPNP Silicon Transistor


KSA1156YS ,PNP Silicon TransistorKSA1156KSA1156High Voltage SwitchingLow Power Switching Regulator DC-DC Converter  High Breakdown ..
KSA1156YS ,PNP Silicon TransistorKSA1156KSA1156High Voltage SwitchingLow Power Switching Regulator DC-DC Converter  High Breakdown ..
KSA1156-Y-S ,PNP Silicon TransistorKSA1156KSA1156High Voltage SwitchingLow Power Switching Regulator DC-DC Converter  High Breakdown ..
KSA1175GTA ,PNP Epitaxial Silicon TransistorKSA1175KSA1175Low Frequency Amplifier• Collector-Base Voltage : V = -60VCBO• Complement to KSC2785T ..
KSA1175YTA ,PNP Epitaxial Silicon TransistorKSA1175KSA1175Low Frequency Amplifier• Collector-Base Voltage : V = -60VCBO• Complement to KSC2785T ..
KSA1182 ,PNP (LOW FREQUENCY POWER AMPLIFIER)KSA1182KSA1182Low Frequency Power Amplifier• Complement to KSC285932SOT-2311. Base 2. Emitter 3 ..
L800BB12VC , 8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory
L800BB12VI , 8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory
L800BB70VI , 8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory
L800BB90VC , 8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory
L800BB90VI , 8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory
L800BT70VC , 8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory


KSA1156OS-KSA1156OSTU-KSA1156YS-KSA1156-Y-S
PNP Silicon Transistor
KSA1156 KSA1156 High Voltage Switching Low Power Switching Regulator DC-DC Converter  High Breakdown Voltage  Low Collector Saturation Voltage  High Speed Switching TO-126 1 1. Emitter 2.Collector 3.Base PNP Silicon Transistor Absolute Maximum Ratings T =25°C unless otherwise noted C Symbol Parameter Ratings Units V Collector-Base Voltage - 400 V CBO V Collector-Emitter Voltage - 400 V CEO V Emitter-Base Voltage - 7 V EBO I Base Current - 0.25 A B I Collector Current (DC) - 0.5 A C I Collector Current (Pulse) - 1 A CP P Collector Dissipation (T =25°C) 1 W C a P Collector Dissipation (T =25°C) 10 W C C T Junction Temperature 150 °C J T Storage Temperature - 55 ~ 150 °C STG Electrical Characteristics T =25°C unless otherwise noted C Symbol Parameter Test Condition Min. Max. Units V (sus) Collector-Emitter Sustaining Voltage I = - 100mA, I = - 10mA - 400 V CEO C B L = - 20mH V (sus) Collector-Emitter Sustaining Voltage I = - 200mA, I = - I = - 20mA - 400 V CEX C B1 B2 V (off)= 5V, L = 10mH BE I Collector Cut-off Current V = - 400V, I = 0 - 100 μA CBO CB E I Emitter Cut-off Current V = - 5V, I = 0 - 10 μA EBO EB C I Collector Cut-off Current V = - 400V, V (off) = 1.5V - 100 μA CEX1 CE BE - 1 mA I Collector Cut-off Current V = - 400V, V (off) = 1.5V CEX2 CE BE T = 125°C C h DC Current Gain V = - 5V, I = - 100mA 30 200 FE CE C V (sat) Collector-Emitter Saturation Voltage I = - 100mA, I = - 10mA - 1 V CE C B V (sat) Base-Emitter Saturation Voltage I = - 100mA, I = - 10mA - 1.2 V BE C B t Turn On Time V = - 150V, I = - 100mA 1 μs ON CC C I = - 10mA , I = 20mA t Storage Time B1 B2 4 μs STG R = 1.5KΩ L t Fall Time 1 μs F h Classification FE Classification N R O Y h 30 ~ 60 40 ~ 80 60 ~ 120 100 ~ 200 FE ©2000 Fairchild Semiconductor International Rev. A, February 2000
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