IC Phoenix
 
Home ›  KK11 > KSA1013OBU,PNP Epitaxial Silicon Transistor
KSA1013OBU Fast Delivery,Good Price
Part Number:
If you need More Quantity or Better Price,Welcom Any inquiry.
We available via phone +865332716050 Email
Partno Mfg Dc Qty AvailableDescript
KSA1013OBUFAIRCHILN/a1129avaiPNP Epitaxial Silicon Transistor


KSA1013OBU ,PNP Epitaxial Silicon TransistorKSA1013KSA1013Color TV Audio OutputColor TV Vertical Deflection OutputTO-92L11. Emitter 2. Collect ..
KSA1015-YTA ,PNP Epitaxial Silicon Transistor
KSA1142YSTU ,PNP Epitaxial Silicon TransistorKSA1142KSA1142Audio Frequency Power Amplifier High Freqency Power Amplifier Complement to KSC2682T ..
KSA1142YSTU ,PNP Epitaxial Silicon TransistorKSA1142KSA1142Audio Frequency Power Amplifier High Freqency Power Amplifier Complement to KSC2682T ..
KSA1156OS ,PNP Silicon TransistorKSA1156KSA1156High Voltage SwitchingLow Power Switching Regulator DC-DC Converter  High Breakdown ..
KSA1156OSTU ,PNP Silicon TransistorKSA1156KSA1156High Voltage SwitchingLow Power Switching Regulator DC-DC Converter  High Breakdown ..
L800BB12VC , 8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory
L800BB12VI , 8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory
L800BB70VI , 8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory
L800BB90VC , 8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory
L800BB90VI , 8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory
L800BT70VC , 8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory


KSA1013OBU
PNP Epitaxial Silicon Transistor
KSA1013 KSA1013 Color TV Audio Output Color TV Vertical Deflection Output TO-92L 1 1. Emitter 2. Collector 3. Base PNP EPITAXIAL SILICON TRANSISTOR Absolute Maximum Ratings T =25°C unless otherwise noted a Symbol Parameter Ratings Units V Collector-Base Voltage -160 V CBO V Collector-Emitter Voltage -160 V CEO V Emitter-Base Voltage -6 V EBO I Collector Current -1 A C I Base Current -0.5 A B P Collector Power Dissipation 900 mW C T Junction Temperature 150 °C J T Storage Temperature -55 ~ 150 °C STG Electrical Characteristics T =25°C unless otherwise noted a Symbol Parameter Test Condition Min. Typ. Max. Units I Collector Cut-off Current V = -150V, I =0 -1 μA CBO CB E I Emitter Cut-off Current V = -6mA, I =0 -1 μA EBO EB C BV Collector-Emitter Breakdown Voltage I = -10mA, I =0 -160 V CEO C B h DC Current Gain V = -5V, I = -200mA 60 320 FE CE C V (sat) Collector-Emitter Saturation Voltage I = -500mA, I = -50mA -1.5 V CE C B V (on) Base-Emitter On Voltage V = -5V, I = -5mA -0.45 -0.75 V BE CE C f Current Gain Bandwidth Product V = -5V, I = -200mA 15 50 MHz T CE C C Output Capacitance V = -10V, I =0, f=1MHz 35 pF ob CB E h Classification FE Classification R O Y h 60 ~ 120 100 ~ 200 160 ~ 320 FE ©2002 Rev. A2, September 2002
ic,good price


TEL:86-533-2716050      FAX:86-533-2716790
   

©2020 IC PHOENIX CO.,LIMITED