| Partno |
Mfg |
Dc |
Qty |
Available | Descript |
| K6T4008V1C-MF70 |
SAMSUNG |
N/a |
2500 |
 |
512Kx8 bit Low Power and Low Voltage CMOS Static RAM |
K6T4008V1C-TF55 SAMSUNG
K6T4008V1C-TF70 SAMSUNG, 512Kx8 bit Low Power and Low Voltage CMOS Static RAM
K6T4008V1C-VB55 SAMSUNG
K6T4008V1C-VB70 SEC, 512Kx8 bit Low Power and Low Voltage CMOS Static RAM
K6T4008V1C-VB70 SAM, 512Kx8 bit Low Power and Low Voltage CMOS Static RAM
K6T4008V1C-VB70 SAMSUNG, 512Kx8 bit Low Power and Low Voltage CMOS Static RAM
K6T4008V1C-VF55 SAMSUNG
K6T4008V1C-VF70 SAMSUNG, 512Kx8 bit Low Power and Low Voltage CMOS Static RAM
K6T4008V1C-VF70 , 512Kx8 bit Low Power and Low Voltage CMOS Static RAM
K6T4008V1C-YB70 SAMSUNG, 512Kx8 bit Low Power and Low Voltage CMOS Static RAM
K6T4008V1C-YF55 SAMSUNG
K6T4008V1C-YF70 SAMSUNG, 512Kx8 bit Low Power and Low Voltage CMOS Static RAM
K6T4008V1C-YF70 SEC, 512Kx8 bit Low Power and Low Voltage CMOS Static RAM
K6T4008V1C-YF70 SAM, 512Kx8 bit Low Power and Low Voltage CMOS Static RAM
K6T4008V1C-MF70 , 512Kx8 bit Low Power and Low Voltage CMOS Static RAM
K6T4008V1C-YF85 , 512Kx8 bit Low Power and Low Voltage CMOS Static RAM
K6T4016C3B-TB55 , 256Kx16 bit Low Power CMOS Static RAM
K6T4016C3B-TB70 , 256Kx16 bit Low Power CMOS Static RAM
K6T4016C3B-TB70 , 256Kx16 bit Low Power CMOS Static RAM
KM4170IS5TR3 ,Low Cost/ +2.7V & +5V/ Rail-to-Rail I/O Amplifiersapplications• PCMCIA, USBV = 4Vo pp• Mobile communications, cellular phones, pagers•Notebooks and P ..
KM4170IT5TR3 ,Low Cost/ +2.7V & +5V/ Rail-to-Rail I/O Amplifiersapplications and available in SC70-5 and dynamic performance with 4.9MHz small signal bandwidthsSOT ..
KM4170IT5TR3 ,Low Cost/ +2.7V & +5V/ Rail-to-Rail I/O AmplifiersFeatures at 2.7V Description• 136µA supply current per amplifier The KM4170 (single), KM4270 (dual) ..
