Partno |
Mfg |
Dc |
Qty |
Available | Descript |
K6T1008C2E-TF70 |
SAMSUNG |
N/a |
15000 |
|
128Kx8 bit Low Power CMOS Static RAM |
K6T1008CZE-GL70 SAMSUNG
K6T1008E-GB70 SAMG
K6T1008U2E-TB70 SAMSUNG
K6T1008U2E-YF10 SAMSUNG
K6T1008U2E-YF10 SAM
K6T1008V2C-GB10 SAMSUNG, 128K x8 bit Low Power and Low Voltage CMOS Static RAM
K6T1008C2E-TF70 , 128Kx8 bit Low Power CMOS Static RAM
K6T1008V2C-GB70 , 128K x8 bit Low Power and Low Voltage CMOS Static RAM
K6T1008V2C-GF70 , 128K x8 bit Low Power and Low Voltage CMOS Static RAM
K6T1008V2C-TB70 , 128K x8 bit Low Power and Low Voltage CMOS Static RAM
K6T2008U2A-YF10 , 256Kx8 bit Low Power and Low Voltage CMOS Static RAM
KM416S4030CT-FL , 1M x 16Bit x 4 Banks Synchronous DRAM
KM416S4030CT-FL , 1M x 16Bit x 4 Banks Synchronous DRAM
KM4170IS5TR3 ,Low Cost/ +2.7V & +5V/ Rail-to-Rail I/O Amplifiersapplications• PCMCIA, USBV = 4Vo pp• Mobile communications, cellular phones, pagers•Notebooks and P ..