Partno |
Mfg |
Dc |
Qty |
Available | Descript |
K4S561632E-UC60 |
SAMSUNG |
N/a |
3400 |
|
256Mb E-die SDRAM Specification 54 TSOP-II with Pb-Free (RoHS compliant) |
K4S561632E-UC75 SAMSUNG, 256Mb E-die SDRAM Specification 54 TSOP-II with Pb-Free (RoHS compliant)
K4S561632E-UC75 SAM, 256Mb E-die SDRAM Specification 54 TSOP-II with Pb-Free (RoHS compliant)
K4S561632E-UC75 , 256Mb E-die SDRAM Specification 54 TSOP-II with Pb-Free (RoHS compliant)
K4S561632E-UC7C SAMSUNG
K4S561632E-UL75 SAMSUNG, 256Mb E-die SDRAM Specification 54 TSOP-II with Pb-Free (RoHS compliant)
K4S561632E-UC60 , 256Mb E-die SDRAM Specification 54 TSOP-II with Pb-Free (RoHS compliant)
K4S561632E-UL75 , 256Mb E-die SDRAM Specification 54 TSOP-II with Pb-Free (RoHS compliant)
K4S561633F , 4M x 16Bit x 4 Banks Mobile SDRAM in 54BOC
K4S56163LF , 4M x 16Bit x 4 Banks Mobile SDRAM in 54BOC
K4S56163LF , 4M x 16Bit x 4 Banks Mobile SDRAM in 54BOC
KIA6259 , BIPOLAR LINEAR INTEGRATED CIRCUIT (LOW NOISE DUAL PRE-AMPLIFIER)
KIA6259P , BIPOLAR LINEAR INTEGRATED CIRCUIT (LOW NOISE DUAL PRE-AMPLIFIER)
KIA6259P , BIPOLAR LINEAR INTEGRATED CIRCUIT (LOW NOISE DUAL PRE-AMPLIFIER)