| Partno |
Mfg |
Dc |
Qty |
Available | Descript |
| K4M56163PG-BG90 |
SAMSUNG |
N/a |
1500 |
 |
4M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA |
K4M56163PG-BN75 SAMSUNG
K4M56163PI-BG75 SAMSUNG
K4M56163PI-BG750JR SAMSUNG
K4M56163PL-BG75 SAMSUNG
K4M56163PL-BG75 SEC
K4M563232E-EN1H SAM
K4M563233D-EE1H SAMSUNG
K4M563233D-EE1H
K4M563233D-EE80 SAMSUNG
K4M563233D-EI1H SAMSUNG
K4M563233D-EN80 SAM
K4M563233D-ENDS SASMSUNG
K4M563233E-EE1H SAMSUMG
K4M563233E-EE1H SAMSUNG
K4M563233E-EN1H SAMSUNG
K4M563233E-EN80 SAMSUNG
K4M563233G-FN60 SAMSUNG
K4M563233G-FN75 SAMSUNG
K4M563233G-HC75 SAMSUNG
K4M563233G-HE75 SAMSUNG
K4M563233G-HF75 SAMSUNG
K4M563233G-HG75 SAMSUNG
K4M563233G-HN60 SAMSUNG
K4M563233G-HN75 SAM
K4M563233G-HN75 SAMSUNG
K4M563233G-HN75 SEC
K4M563233G-HN7500 SAMSUNG
K4M56163PG-BG90 , 4M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA
K4M56323LE-EE1H , 2M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA
K4M64163PK-BG1L , 1M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA
K4M64163PK-BG75 , 1M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA
K4N26323AE , 128Mbit GDDR2 SDRAM
KHB011N40P1 , N CHANNEL MOS FIELD EFFECT TRANSISTOR
KHB2D0N60F , N CHANNEL MOS FIELD EFFECT TRANSISTOR
KHB2D0N60P , N CHANNEL MOS FIELD EFFECT TRANSISTOR
