Partno |
Mfg |
Dc |
Qty |
Available | Descript |
K4J55323QF-GC14 |
SAMSUNG |
N/a |
6000 |
|
256Mbit GDDR3 SDRAM |
K4J55323QF-GC14 , 256Mbit GDDR3 SDRAM
K4J55323QF-GC15 , 256Mbit GDDR3 SDRAM
K4M28163LH-BG75 , Mobile SDRAM
K4M28163LH-BN75 , Mobile SDRAM
K4M28163PF , 2M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA
KGT25N120NDA , SEMICONDUCTOR TECHNICAL DATA
KH104 ,DC to 1.1GHz Linear Amplifierapplications such12-15V1as radar or wideband analog communications systems.4 11V KH104 Vin o3,5-102 ..
KHB011N40P1 , N CHANNEL MOS FIELD EFFECT TRANSISTOR