Partno |
Mfg |
Dc |
Qty |
Available | Descript |
K4E641612C-TC60 |
SAMSUNG |
N/a |
3909 |
|
4M x 16bit CMOS Dynamic RAM with Extended Data Out |
K4E641612C-TL50 SAM, 4M x 16bit CMOS Dynamic RAM with Extended Data Out
K4E641612C-TC60 , 4M x 16bit CMOS Dynamic RAM with Extended Data Out
K4E641612C-TL60 , 4M x 16bit CMOS Dynamic RAM with Extended Data Out
K4E641612C-TL60 , 4M x 16bit CMOS Dynamic RAM with Extended Data Out
K4E661612C-TL50 , 4M x 16bit CMOS Dynamic RAM with Extended Data Out
K4H280438D-TCA0 , 128Mb DDR SDRAM
KF120 ,VERY LOW DROP VOLTAGE REGULATORS WITH INHIBITKF00SERIES VERY LOW DROPVOLTAGE REGULATORS WITH INHIBITn VERY LOW DROPOUT VOLTAGE (0.4V)n VERY LOW ..
KF120BDT-TR ,VERY LOW DROP VOLTAGE REGULATOR WITH INHIBITELECTRICAL CHARACTERISTICS FOR KF25 (refer to the test circuits, T = 25°C, C =0.1 μF,j IC =2.2μF un ..
KF12BDT-TR ,VERY LOW DROP VOLTAGE REGULATOR WITH INHIBITELECTRICAL CHARACTERISTICS FOR KF25 (refer to the test circuits, T = 25°C, C =0.1 μF,j IC =2.2μF un ..