Partno |
Mfg |
Dc |
Qty |
Available | Descript |
K4D64163HF-TC40 |
SEC |
N/a |
156 |
|
1M x 16Bit x 4 Banks Double Data Rate Synchronous DRAM |
K4D64163HF-TC40 |
SAMSUNG |
N/a |
70 |
|
1M x 16Bit x 4 Banks Double Data Rate Synchronous DRAM |
K4D64163HF-TC40 |
SAMG |
N/a |
4 |
|
1M x 16Bit x 4 Banks Double Data Rate Synchronous DRAM |
K4E641612C-TC50 , 4M x 16bit CMOS Dynamic RAM with Extended Data Out
K4E641612C-TC60 , 4M x 16bit CMOS Dynamic RAM with Extended Data Out
K4E641612C-TL60 , 4M x 16bit CMOS Dynamic RAM with Extended Data Out
K4E641612C-TL60 , 4M x 16bit CMOS Dynamic RAM with Extended Data Out
K4E661612C-TL50 , 4M x 16bit CMOS Dynamic RAM with Extended Data Out
KF120 ,VERY LOW DROP VOLTAGE REGULATORS WITH INHIBITKF00SERIES VERY LOW DROPVOLTAGE REGULATORS WITH INHIBITn VERY LOW DROPOUT VOLTAGE (0.4V)n VERY LOW ..
KF120BDT-TR ,VERY LOW DROP VOLTAGE REGULATOR WITH INHIBITELECTRICAL CHARACTERISTICS FOR KF25 (refer to the test circuits, T = 25°C, C =0.1 μF,j IC =2.2μF un ..
KF12BDT-TR ,VERY LOW DROP VOLTAGE REGULATOR WITH INHIBITELECTRICAL CHARACTERISTICS FOR KF25 (refer to the test circuits, T = 25°C, C =0.1 μF,j IC =2.2μF un ..