| Partno |
Mfg |
Dc |
Qty |
Available | Descript |
| K4D553235F-GC25 |
SAMSUNG |
N/a |
7800 |
 |
256M GDDR SDRAM |
K4D553235F-GC2A SAMSUNG, 256M GDDR SDRAM
K4D553235F-GC33 SAMSUNG, 256M GDDR SDRAM
K4D553235F-GC33 SAM, 256M GDDR SDRAM
K4D553235F-GC36 SAMSUNG
K4D553235F-VC21 SAMSUNG
K4D553235F-VC25 SAMSUNG
K4D553235F-VC2A SAMSUNG
K4D553235F-VC33 SANSUNG
K4D553235F-VC33 SAMSUNG
K4D553235F-VC33 SAMSUNG
K4D553235F-VC33 SEC
K4D553235F-VC36 SAMSUNG
K4D553238E-JC33 SAMSUNG
K4D553238E-JC36 SAMSUNG
K4D553238F-GC25 SAMSUNG
K4D553235F-GC25 , 256M GDDR SDRAM
K4D553238F-GC2A , 256Mbit GDDR SDRAM
K4D553238F-GC33 , 256Mbit GDDR SDRAM
K4D553238F-GC36 , 256Mbit GDDR SDRAM
K4D553238F-JC2A , 256Mbit GDDR SDRAM
KF120 ,VERY LOW DROP VOLTAGE REGULATORS WITH INHIBITKF00SERIES VERY LOW DROPVOLTAGE REGULATORS WITH INHIBITn VERY LOW DROPOUT VOLTAGE (0.4V)n VERY LOW ..
KF120BDT-TR ,VERY LOW DROP VOLTAGE REGULATOR WITH INHIBITELECTRICAL CHARACTERISTICS FOR KF25 (refer to the test circuits, T = 25°C, C =0.1 μF,j IC =2.2μF un ..
KF12BDT-TR ,VERY LOW DROP VOLTAGE REGULATOR WITH INHIBITELECTRICAL CHARACTERISTICS FOR KF25 (refer to the test circuits, T = 25°C, C =0.1 μF,j IC =2.2μF un ..
