| Partno |
Mfg |
Dc |
Qty |
Available | Descript |
| K4D551638D-TC60 |
SAMSUNG |
N/a |
106 |
 |
256Mbit GDDR SDRAM |
K4D551638F-LC33 SAMSUNG
K4D551638F-LC40 SAMSUNG
K4D551638FLC50 SAMSUNG
K4D551638F-LC50 SAMSUNG
K4D551638F-LC50 SAM
K4D551638F-LC60 SAMSUNG
K4D551638F-TC33 SAMSUNG, 256Mbit GDDR SDRAM
K4D551638F-TC36 SAMSUNG, 256Mbit GDDR SDRAM
K4D551638D-TC60 , 256Mbit GDDR SDRAM
K4D551638F-TC40 , 256Mbit GDDR SDRAM
K4D551638F-TC60 , 256Mbit GDDR SDRAM
K4D553235F-GC25 , 256M GDDR SDRAM
K4D553238F-GC2A , 256Mbit GDDR SDRAM
KF120 ,VERY LOW DROP VOLTAGE REGULATORS WITH INHIBITKF00SERIES VERY LOW DROPVOLTAGE REGULATORS WITH INHIBITn VERY LOW DROPOUT VOLTAGE (0.4V)n VERY LOW ..
KF120BDT-TR ,VERY LOW DROP VOLTAGE REGULATOR WITH INHIBITELECTRICAL CHARACTERISTICS FOR KF25 (refer to the test circuits, T = 25°C, C =0.1 μF,j IC =2.2μF un ..
KF12BDT-TR ,VERY LOW DROP VOLTAGE REGULATOR WITH INHIBITELECTRICAL CHARACTERISTICS FOR KF25 (refer to the test circuits, T = 25°C, C =0.1 μF,j IC =2.2μF un ..
