Partno |
Mfg |
Dc |
Qty |
Available | Descript |
K4D26323QG-GC25 |
SAMSUNG |
N/a |
7800 |
|
128Mbit GDDR SDRAM |
K4D26323QG-GC2A SAMSUNG, 128Mbit GDDR SDRAM
K4D26323QG-GC2A SANSUNG, 128Mbit GDDR SDRAM
K4D26323QG-GC33 SAM, 128Mbit GDDR SDRAM
K4D26323QG-GC33 SAMSUNG, 128Mbit GDDR SDRAM
K4D26323QG-VC2A SAMSUNG
K4D26323QG-VC2A SAMSUANG
K4D26323QG-VC33 SAMSUNG
K4D26323RA-GC28 SAMSUNG
K4D26323RA-GC2B SAM
K4D26323RA-GC2B SAMSUNG
K4D26323RA-GC2B
K4D26323QG-GC25 , 128Mbit GDDR SDRAM
K4D26323RA-GC33 , 1M x 32Bit x 4 Banks Double Data Rate Synchronous RAM with Bi-directional Data Strobe and DLL
K4D28163HD-TC50 , 128Mbit DDR SDRAM
K4D28163HD-TC50 , 128Mbit DDR SDRAM
K4D551638D-TC36 , 256Mbit GDDR SDRAM
KF120 ,VERY LOW DROP VOLTAGE REGULATORS WITH INHIBITKF00SERIES VERY LOW DROPVOLTAGE REGULATORS WITH INHIBITn VERY LOW DROPOUT VOLTAGE (0.4V)n VERY LOW ..
KF120BDT-TR ,VERY LOW DROP VOLTAGE REGULATOR WITH INHIBITELECTRICAL CHARACTERISTICS FOR KF25 (refer to the test circuits, T = 25°C, C =0.1 μF,j IC =2.2μF un ..
KF12BDT-TR ,VERY LOW DROP VOLTAGE REGULATOR WITH INHIBITELECTRICAL CHARACTERISTICS FOR KF25 (refer to the test circuits, T = 25°C, C =0.1 μF,j IC =2.2μF un ..