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K3296 from NEC, NEC 500pcs , TO263,MOS FIELD EFFECT TRANSISTOR
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K3296 NEC N/a 500

ELECTRICAL CHARACTERISTICS(TA = 25°C)CHARACTERISTICS SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITDrain Leakage Current IDSS VDS = 20 V, VGS = 0 V 10 µ AGate Leakage Current IGSSVGS = ±20 V, VDS = 0 V ±10 µ AGate Cut-off Voltage VGS(off) VDS = 10 V, ID = 1 mA 1.0 2.5 VForward Transfer Admittance | yfs |VDS = 10 V, ID = 18 A 9.0 SDrain to Source On-state Resistance RDS(on)1 VGS = 10 V, ID = 18 A 8.5 12 mΩRDS(on)2 VGS = 4.5 V, ID = 18 A 12 19mΩInput Capacitance Ciss VDS = 10 V 1300 pFOutput Capacitance Coss VGS = 0 V 570 pFReverse Transfer Capacitance Crss f = 1 MHz 300 pFTurn-on Delay Time td(on) VDD = 10 V , ID = 18 A 70 nsRise Time tr VGS(on) = 10 V 1220 nsTurn-off Delay Time td(off) 100 nsRG = 10 ΩFall Time tf 180 nsTotal Gate Charge QG VDD = 16 V 30 nCGate to Source Charge QGS VGS = 10 V 4.5 nCGate to Drain Charge QGD ID = 35 A 8.0 nCDiode Forward Voltage VF(S-D) IF = 35 A, VGS = 0 V 1.0 VReverse Recovery Time trr IF = 35 A, VGS = 0 V 35 nsReverse Recovery Charge Qrr di/dt = 100 A/µ s 23 nCTEST CIRCUIT 1 SWITCHING TIME TEST CIRCUIT 2 GATE CHARGED.U.T.D.U.T.IG = 2 mARLVGSRL90%VGSVGS(on)10%Wave Form0RGPG.50 Ω VDDPG. VDD90%ID90%IDVGS10%10%ID00Wave Formtd(on) tr td(off) t fτton toffτ = 1 s µDuty Cycle ≤ 1%2 Data Sheet D14063EJ2V0DS2SK3296
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